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S12GR Datasheet(PDF) 1 Page - GeneSiC Semiconductor, Inc. |
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S12GR Datasheet(HTML) 1 Page - GeneSiC Semiconductor, Inc. |
1 / 3 page VRRM = 100 V - 600 V IF =12 A Features • High Surge Capability DO-4 Package • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 3. Stud is base. Parameter Symbol S12B (R) S12D (R) Unit Repetitive peak reverse voltage VRRM 100 200 V RMS reverse voltage VRMS 70 140 V DC blocking voltage VDC 100 200 V 2. Reverse polarity (R): Stud is anode. S12B thru S12JR S12J (R) 400 280 S12G (R) Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) • Types from 100 V to 600 V VRRM Silicon Standard Recovery Diode Conditions 600 420 600 400 DC blocking voltage VDC 100 200 V Continuous forward current IF 12 12 A Operating temperature Tj -55 to 150 -55 to 150 °C Storage temperature Tstg -55 to 150 -55 to 150 °C Parameter Symbol S12B (R) S12D (R) Unit Diode forward voltage 1.1 1.1 10 10 μA 12 12 mA Thermal characteristics Thermal resistance, junction - case RthJC 2.50 2.50 °C/W 12 12 A 280 Reverse current IR VF 280 V Electrical characteristics, at Tj = 25 °C, unless otherwise specified VR = 50 V, Tj = 25 °C IF = 12 A, Tj = 25 °C TC ≤ 144 °C Conditions 280 280 -55 to 150 12 -55 to 150 S12J (R) 10 10 S12G (R) 2.50 VR = 50 V, Tj = 175 °C 2.50 1.1 1.1 12 -55 to 150 -55 to 150 TC = 25 °C, tp = 8.3 ms 600 400 Surge non-repetitive forward current, Half Sine Wave IF,SM www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/ 1 |
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