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MURT10005R Datasheet(PDF) 1 Page - GeneSiC Semiconductor, Inc. |
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MURT10005R Datasheet(HTML) 1 Page - GeneSiC Semiconductor, Inc. |
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1 / 3 page  VRRM = 50 V - 200 V IF(AV) = 100 A Features • High Surge Capability Three Tower Package • Types from 50 V to 200 V VRRM • Isolation Type Package • Electrically Isolated base plate • Not ESD Sensitive Parameter Symbol MURT10005(R) MURT10010(R) Unit Repetitive peak reverse voltage VRRM 50 100 V RMS reverse voltage VRMS 35 71 V MURT10005 thru MURT10020R Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Conditions MURT10020(R) 200 141 Silicon Super Fast Recovery Diode DC blocking voltage VDC 50 100 V Operating temperature Tj -55 to 150 -55 to 150 °C Storage temperature Tstg -55 to 150 -55 to 150 °C Parameter Symbol MURT10005(R) MURT10010(R) Unit Average forward current (per pkg) IF(AV) 100 100 A Peak forward surge current (per leg) IFSM 1500 1500 A Maximum instantaneous forward voltage (per leg) 1.0 1.0 25 25 μA 11 mA Maximum reverse recovery time (per leg) Trr 75 75 nS Thermal characteristics Thermal resistance, junction - case (per leg) R ΘJC 1.0 1.0 °C/W Tj = 25 °C IFM = 50 A, Tj = 25 °C Conditions 200 V Electrical characteristics, at Tj = 25 °C, unless otherwise specified Maximum instantaneous reverse current at rated DC blocking voltage (per leg) IR VF Tj = 125 °C MURT10020(R) -55 to 150 -55 to 150 1.0 25 TC = 140 °C 100 tp = 8.3 ms, half sine 1500 IF=0.5 A, IR=1.0 A, IRR= 0.25 A 75 1.0 1 www.genesicsemi.com/silicon-products/super-fast-recovery-rectifiers/ 1 |
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