Features

• High Surge Capability

DO-4 Package

• Not ESD Sensitive

Note:

1. Standard polarity: Stud is cathode.

3. Stud is base.

Parameter

Symbol

MUR2505 (R)

MUR2510 (R)

Unit

Repetitive peak reverse

voltage

50

100

V

RMS reverse voltage

35

70

V

Silicon Super Fast

Recovery Diode

2. Reverse polarity (R): Stud is anode.

MUR2505 thru MUR2520R

Conditions

MUR2520 (R)

200

140

DC blocking voltage

50

100

V

Continuous forward current

25

25

A

Operating temperature

-55 to 150

-55 to 150

°C

Storage temperature

-55 to 150

-55 to 150

°C

Parameter

Symbol

MUR2505 (R)

MUR2510 (R)

Unit

Diode forward voltage

1

1

10

10

μA

33

mA

Recovery Time

Maximum reverse recovery

time

75

75

ns

MUR2520 (R)

-55 to 150

-55 to 150

1

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

Surge non-repetitive forward

current, Half Sine Wave

Reverse current

A

25

500

Conditions

500

500

200

V

75

3

10

www.genesicsemi.com/silicon-products/super-fast-recovery-rectifiers/

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