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MSRTA30060D Datasheet(PDF) 1 Page - GeneSiC Semiconductor, Inc.

Part # MSRTA30060D
Description  Silicon Standard Recovery Diode
Download  3 Pages
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Manufacturer  GENESIC [GeneSiC Semiconductor, Inc.]
Direct Link  http://www.genesicsemi.com/
Logo GENESIC - GeneSiC Semiconductor, Inc.

MSRTA30060D Datasheet(HTML) 1 Page - GeneSiC Semiconductor, Inc.

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VRRM = 600 V - 1000 V
IF(AV) = 300 A
Features
• High Surge Capability
Heavy Three Tower Package
• Isolation Type Package
• Not ESD Sensitive
Parameter
Symbol
Unit
Repetitive peak reverse voltage
VRRM
V
DC blocking voltage
VDC
V
Operating temperature
Tj
°C
Maximum ratings, at Tj = 25 °C, unless otherwise specified
600
1000
1000
-55 to 150
-55 to 150
-55 to 150
MSRTA30060(A)D
Silicon Standard
Recovery Diode
800
600
• Types from 600 V to 1000 V VRRM
• Electrically Isolated Base Plate
MSRTA30060(A)D thru MSRTA300100(A)D
MSRTA30080(A)D MSRTA300100(A)D
800
Conditions
Operating temperature
j
C
Storage temperature
Tstg
°C
Parameter
Symbol
Unit
Average forward current (per
leg)
IF(AV)
A
Maximum instantaneous
forward voltage (per leg)
μA
mA
Thermal characteristics
Maximum thermal resistance,
junction - case
(per leg)
R
Θjc
°C/W
1.1
1.1
55 to 50
55 to 50
55 to 50
-55 to 150
-55 to 150
-55 to 150
0.28
0.28
Tj = 150 °C
10
10
20
1.1
Maximum instantaneous
reverse current at rated DC
blocking voltage (per leg)
IR
VF
Tj = 25 °C
IFM = 300 A, Tj = 25 °C
MSRTA300100(A)D
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
V
MSRTA30060(A)D MSRTA30080(A)D
10
TC = 125 °C
300
300
300
3800
A
Conditions
0.28
20
20
Peak forward surge current
(per leg)
IFSM
tp = 8.3 ms, half sine
3800
3800
www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
1


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