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GM71V18163C-7 Datasheet(PDF) 4 Page - Hynix Semiconductor |
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GM71V18163C-7 Datasheet(HTML) 4 Page - Hynix Semiconductor |
4 / 11 page GM71VS18163CL GM71V18163C Rev 0.1 / Apr’01 DC Electrical Characteristics (VCC = 3.3V+/-0.3V, Vss = 0V, TA = 0 ~ 70C) Symbol Parameter Note VOH VOL Output Level Output "H" Level Voltage (IOUT = -2mA) Unit V V Max VCC 0.4 Min 2.4 0 Output Level Output "L" Level Voltage (IOUT = 2mA) ICC1 Operating Current Average Power Supply Operating Current (RAS, UCAS or LCAS Cycling: tRC = tRC min) ICC2 Standby Current (TTL) Power Supply Standby Current (RAS, UCAS, LCAS = VIH, DOUT = High-Z) ICC3 RAS Only Refresh Current Average Power Supply Current RAS Only Refresh Mode (tRC = tRC min) ICC4 ICC5 Standby Current (CMOS) Power Supply Standby Current (RAS, UCAS or LCAS >= VCC - 0.2V, DOUT = High-Z) ICC6 CAS-before-RAS Refresh Current (tRC = tRC min) ICC7 IL(I) uA 10 -10 IL(O) uA 10 -10 Input Leakage Current Any Input (0V<=VIN<= 4.6V) Output Leakage Current (DOUT is Disabled, 0V<=VOUT<= 4.6V) EDO Page Mode Current Average Power Supply Current EDO Page Mode (tHPC = tHPC min) Note: 1. ICC depends on output load condition when the device is selected. ICC(max) is specified at the output open condition. 2. Address can be changed once or less while RAS = VIL. 3. Address can be changed once or less while LCAS and UCAS = VIH. 4. UCAS = L (<=0.2) and LCAS = L (<=0.2) while RAS = L (<=0.2). 5. L-version. Battery Back Up Operating Current(Standby with CBR Ref.) (CBR refresh, tRC=125us, tRAS<=0.3us, DOUT=High-Z, CMOS interface) 400 - 4,5 uA ICC8 ICC9 uA Self-Refresh Mode Current (RAS, UCAS or LCAS<=0.2V, DOUT=High-Z) 250 - 5 mA 2 - mA 1 - 150 - uA mA 1, 2 mA 2 mA 1, 3 mA 5 - 5 1 mA Standby Current RAS = VIH U CAS, LCAS = VIL DOUT = Enable 190 - 50ns 60ns 70ns 170 150 - - - 190 - 50ns 60ns 70ns 170 150 - - 185 - 50ns 60ns 70ns 165 145 - 190 - 50ns 60ns 70ns - - 170 150 |
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Similar Description - GM71V18163C-7 |
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