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BLF177_2015 Datasheet(PDF) 3 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BLF177_2015 Datasheet(HTML) 3 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
3 / 20 page 1998 Jul 02 3 Philips Semiconductors Product specification HF/VHF power MOS transistor BLF177 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 110 V VGS gate-source voltage −±20 V ID drain current (DC) − 16 A Ptot total power dissipation Tmb ≤ 25 °C − 220 W Tstg storage temperature −65 150 °C Tj junction temperature − 200 °C SYMBOL PARAMETER VALUE UNIT Rth j-mb thermal resistance from junction to mounting base max. 0.8 K/W Rth mb-h thermal resistance from mounting base to heatsink max. 0.2 K/W Fig.2 DC SOAR. (1) Current in this area may be limited by RDSon. (2) Tmb =25 °C. handbook, halfpage 102 10 1 10−1 MRA906 110 VDS (V) ID (A) 102 103 (1) (2) Fig.3 Power derating curves. (1) Short-time operation during mismatch. (2) Continuous operation. handbook, halfpage 0 300 200 100 0 50 (2) (1) 100 150 MGP089 Ptot (W) Th (°C) |
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