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GM71V18163CL-7 Datasheet(PDF) 8 Page - Hynix Semiconductor

Part # GM71V18163CL-7
Description  1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM
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Manufacturer  HYNIX [Hynix Semiconductor]
Direct Link  http://www.skhynix.com/kor/main.do
Logo HYNIX - Hynix Semiconductor

GM71V18163CL-7 Datasheet(HTML) 8 Page - Hynix Semiconductor

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GM71VS18163CL
GM71V18163C
Rev 0.1 / Apr’01
Symbol
Parameter
Note
Max
Unit
Min
Max
Min
tHPC
25
-
30
-
tRASP
tACP
35
-
40
-
tRHCP
9,17,22
-
-
16
100,000
100,000
-
-
35
40
GM71V(S)18163
C/CL-6
GM71V(S)18163
C/CL-7
EDO Page Mode Cycle
25
tDOH
tCOL
tCOP
tRCHP
3
3
-
-
-
-
9
10
13
5
5
35
40
ns
ns
ns
ns
ns
ns
ns
ns
Min
20
-
30
-
-
-
GM71V(S)18163
C/CL-5
3
-
-
-
-
5
30
Max
100,000
8
Access Time from CAS Precharge
RAS Hold Time from CAS Precharge
EDO Page Mode RAS Pulse Width
EDO Page Mode Cycle Time
Output data Hold Time from CAS low
CAS Hold Time referred OE
CAS to OE Setup Time
Read command Hold Time
from CAS Precharge
30
EDO Page Mode Read-Modify-Write Cycle
Symbol
Parameter
Note
Max
Unit
Min
Max
Min
tHPRWC
68
-
79
-
ns
tCPW
54
-
62
-
ns
14,22
EDO Page Mode Read-Modify-Write
Cycle Time
WE Delay Time from CAS Precharge
GM71V(S)18163
C/CL-6
GM71V(S)18163
C/CL-7
Refresh
Symbol
Parameter
Note
Max
Unit
Min
Max
Min
tREF
16
-
-
ms
tREF
Refresh period
Refresh period (L -Series)
128
-
128
-
ms
GM71V(S)18163
C/CL-6
GM71V(S)18163
C/CL-7
16
1024
cycles
1024
cycles
Max
Min
57
-
45
-
GM71V(S)18163
C/CL-5
Max
Min
16
-
128
-
GM71V(S)18163
C/CL-5


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