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BGD704_2015 Datasheet(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BGD704_2015 Datasheet(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
2 / 12 page 2001 Nov 02 2 Philips Semiconductors Product specification 750 MHz, 20 dB gain power doubler amplifier BGD704 FEATURES • Excellent linearity • Extremely low noise • Silicon nitride passivation • Rugged construction • Gold metallization ensures excellent reliability. APPLICATIONS • CATV systems in the frequency range of 40 to 750 MHz. DESCRIPTION Hybrid amplifier module operating at a voltage supply of 24 V (DC) encapsulated in a SOT115J package. PINNING - SOT115J PIN DESCRIPTION 1 input 2 common 3 common 5+VB 7 common 8 common 9 output Fig.1 Simplified outline. alfpage 7 8 9 2 35 1 Side view MSA319 QUICK REFERENCE DATA LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Gp power gain f = 50 MHz 19.5 20.5 dB f = 750 MHz 20 − dB Itot total current consumption (DC) VB =24V − 435 mA SYMBOL PARAMETER MIN. MAX. UNIT Vi RF input voltage − 65 dBmV Tstg storage temperature −40 +100 °C Tmb operating mounting base temperature −20 +100 °C |
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