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GM71C18163CL-6 Datasheet(PDF) 10 Page - Hynix Semiconductor |
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GM71C18163CL-6 Datasheet(HTML) 10 Page - Hynix Semiconductor |
10 / 11 page GM71CS18163CL GM71C18163C Rev 0.1 / Apr’01 15. These parameters are referred to UCAS and LCAS leading edge in early write cycles and to WE leading edge in delayed write or read-modify-write cycles. 16. tRASP defines RAS pulse width in EDO mode cycles. 17. Access time is determined by the longer of tAA or tCAC or tACP. 18. In delayed write or read-modify-write cycles, OE must disable output buffer prior to applying data to the device. After RAS is reset, if tOEH>=tCWL, the I/O pin will remain open circuit (high impedance): if tOEH<=tCWL, invalid data will be out at each I/O. 19. When both LCAS and UCAS go low at the same time, all 16-bits data are written into the device. LCAS and UCAS cannot be staggered within the same write/read cycles. 20. All the Vcc and Vss pins shall be supplied with the same voltages. 21. tASC, tCAH, tRCS, tWCS, tWCH, tCSR and tRPC are determined by the earlier falling edge of UCAS or LCAS. 22. tCRP, tCHR, tRCH, tACP and tCPW are determined by the later rising edge of UCAS or LCAS. 23. tCWL, tDH, tDS and tCHS should be satisfied by both UCAS and LCAS. 24. tCP is determined by the time that both UCAS and LCAS are high. tHPC(min) can be achieved during a series of EDO page made write cycles or EDO mode write cycles. It both write and read operation are mixed in a EDO mode RAS cycle(EDO mode mix cycle (1),(2)) minimum Value of CAS cycle (tCAS+tCP+2tT) becomes greater than the specified tHPC (min) value. The value of CAS cycle time of mixed EDO mode is shown in EDO mode mix cycle (1) and (2). When output buffers are enabled once, sustain the low impedance state until valid data is obtained. When output buffer is turned on and off within a very short time , generally it causes large Vcc/Vss line noise, which causes to degrade VIH min/VIL max level. Data output turns off and becomes high impedance from later rising edge of RAS and CAS. Hold time and turn off time are specified by the timing specification of later rising edge of RAS and CAS between tOHR and tOH, and between tOFR and tOFF. EDO Hi-Z control by OE or WE. OE rising edge disables data outputs. When OE goes high during CAS high, the data will not come out until next CAS access. When WE goes low during CAS high, the data will not come out until next CAS access. Please do not use tRASS timing, 10us<=tRASS<=100us. During this period, the device is in transition state from normal operation mode to self refresh mode. If tRASS>=100us, then RAS precharge time should use tRPS instead of tRP. 25. 26. 29. 27. 28. H or L ( H : VIH(min) <= VIN <= VIH(max), L : VIL(min) <= VIN <= VIL(max) ) 30. |
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Similar Description - GM71C18163CL-6 |
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