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BFS17W_2015 Datasheet(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BFS17W_2015 Datasheet(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2 / 6 page  1995 Sep 04 2 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BFS17W APPLICATIONS Primarily intended as a mixer, oscillator and IF amplifier in UHF and VHF tuners. DESCRIPTION Silicon NPN transistor in a plastic SOT323 (S-mini) package. The BFS17W uses the same crystal as the SOT23 version, BFS17. PINNING PIN DESCRIPTION 1 base 2 emitter 3 collector Fig.1 SOT323 handbook, 2 columns 3 12 MBC870 Top view Marking code: E1 QUICK REFERENCE DATA Note 1. Ts is the temperature at the soldering point of the collector pin. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Note 1. Ts is the temperature at the soldering point of the collector pin. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage −− 25 V VCEO collector-emitter voltage −− 15 V IC DC collector current −− 50 mA Ptot total power dissipation up to Ts =118 °C; note 1 −− 300 mW hFE DC current gain IC = 2 mA; VCE = 1 V 25 90 − fT transition frequency IC = 25 mA; VCE =5V − 1.6 − GHz Cc collector capacitance IE = 0; VCB = 10 V; f = 1 MHz − 0.8 1.5 pF Cre feedback capacitance IC = 1 mA; VCE =5V; f=1MHz − 0.75 − pF Tj junction temperature −− 175 °C SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 25 V VCEO collector-emitter voltage open base − 15 V VEBO emitter-base voltage open collector − 2.5 V IC collector current (DC) − 50 mA Ptot total power dissipation Ts =118 °C; note 1 − 300 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 175 °C |
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