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BFQ19_2015 Datasheet(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BFQ19_2015 Datasheet(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2 / 6 page  September 1995 2 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFQ19 DESCRIPTION NPN transistor in a SOT89 plastic envelope intended for application in thick and thin-film circuits. It is primarily intended for use in UHF and microwave amplifiers such as in aerial amplifiers, radar systems, oscilloscopes, spectrum analyzers etc. The transistor features very low intermodulation distortion and high power gain. Due to its very high transition frequency, it also has excellent wideband properties and low noise up to high frequencies. PINNING PIN DESCRIPTION Code: FB 1 emitter 2 collector 3 base Fig.1 SOT89. page 12 3 Bottom view MBK514 QUICK REFERENCE DATA LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). Note 1. Ts is the temperature at the soldering point of the collector tab. SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCEO collector-emitter voltage open base − 15 V IC DC collector current − 100 mA Ptot total power dissipation up to Ts = 145 °C (note 1) − 1W fT transition frequency Ic = 50 mA; VCE = 10 V; f = 500 MHz; Tj =25 °C 5.5 − GHz Cre feedback capacitance Ic = 10 mA; VCE = 10 V; f = 1 MHz; Tamb =25 °C 1.3 − pF F noise figure Ic = 50 mA; VCE = 10 V; Zs = opt.; f = 500 MHz; Tamb =25 °C 3.3 − dB SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 20 V VCEO collector-emitter voltage open base − 15 V VEBO emitter-base voltage open collector − 3.3 V IC DC collector current − 100 mA ICM peak collector current f > 1 MHz − 150 mA Ptot total power dissipation up to Ts = 145 °C (note 1) − 1W Tstg storage temperature −65 150 °C Tj junction temperature − 175 °C |
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