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BFG94_2015 Datasheet(PDF) 3 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BFG94_2015 Datasheet(HTML) 3 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
3 / 13 page September 1995 3 Philips Semiconductors Product specification NPN 6 GHz wideband transistor BFG94 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). THERMAL RESISTANCE Note 1. Ts is the temperature at the soldering point of the collector tab. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 15 V VCEO collector-emitter voltage open base − 12 V VEBO emitter-base voltage open collector − 2V IC DC collector current − 60 mA Ptot total power dissipation up to Ts = 140 °C (note 1) − 700 mW Tstg storage temperature −65 150 °C Tj junction temperature − 175 °C SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE Rth j-s thermal resistance from junction to soldering point up to Ts = 140 °C (note 1) 50 K/W |
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