HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HE6537

Issued Date : 1992.11.25

Revised Date : 2002.02.22

Page No. : 1/3

HSD965

HSMC Product Specification

HSD965

NPN EPITAXIAL PLANAR TRANSISTOR

Description

The HSD965 is suited for use as AF output amplifier and flash unit.

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature ............................................................................................ -55 ~ +150

°C

Junction Temperature ...................................................................................... 150

°C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Ta=25

°C) ................................................................................ 750 mW

• Maximum Voltages and Currents (Ta=25°C)

VCBO Collector to Base Voltage ......................................................................................... 40 V

VCEO Collector to Emitter Voltage ...................................................................................... 20 V

VEBO Emitter to Base Voltage .............................................................................................. 7 V

IC Collector Current (Continuous) ......................................................................................... 5 A

IC Collector Current (Peak PT=10mS) .................................................................................. 8 A

°C)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

40

-

-

V

IC=100uA, IE=0

BVCEO

20

-

-

V

IC=1mA, IB=0

BVEBO

7

-

-

V

IE=10uA, IC=0

ICBO

-

-

0.1

uA

VCB=10V, IE=0

IEBO

-

-

0.1

uA

VEB=7V, IC=0

*VCE(sat)

-

0.35

1

V

IC=3A, IB=100mA

*hFE1

230

-

800

VCE=2V, IC=0.5A

*hFE2

150

-

-

VCE=2V, IC=2A

fT

-

150

-

MHz

VCE=6V, IE=50mA

Cob

-

-

50

pF

VCB=20V, f=1MHz, IE=0

*Pulse Test: Pulse Width

≤380us, Duty Cycle≤2%

Classification Of hFE

Rank

Q

R

S

Range

230-380

340-600

560-800

TO-92