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STS05DTP03 Datasheet(PDF) 4 Page - STMicroelectronics |
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STS05DTP03 Datasheet(HTML) 4 Page - STMicroelectronics |
4 / 10 page Electrical characteristics STS05DTP03 4/10 Table 5. Q2-PNP electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit ICBO Collector cut-off current (IE = 0) VCB = -30 V -10 µA ICEO Collector cut-off current (IB = 0) VCE = -30 V -1 µA IEBO Emitter cut-off current (IB = 0) VEB = -6 V -10 µA V(BR)CEO (1) Collector-emitter breakdown voltage (IB = 0) IC = -10 mA -30 V VCE(sat) (1) Collector-emitter saturation voltage IC = -1 A IB = -10 mA IC = -3 A IB = -100 mA IC = -5 A IB = -250 mA -0.25 -0.7 -0.7 V V V VBE(sat) (1) Base-emitter saturation voltage IC = -1 A IB = -10 mA -1.0 V hFE (1) DC current gain IC = -1 A VCE = -2 V IC = -3 A VCE = -2 V IC = -5 A VCE = -2 V IC = -10 A VCE = -2 V 100 100 80 140 100 40 300 1. Pulsed duration = 300 µs, duty cycle ≤1.5 % Obsolete Product(s) - Obsolete Product(s) |
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