HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HE6706-B

Issued Date : 1993.01.13

Revised Date : 1999.08.01

Page No. : 1/3

HSMC Product Specification

HSD1159

NPN EPITAXIAL PLANAR TRANSISTOR

Description

Capable of efficient drive with small internal loss due to excellent tf.

°C)

• Maximum Temperatures

Storage Temperature ............................................................................................ -55 ~ +150

°C

Junction Temperature ................................................................................... +150

°C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Tc=25

°C) .................................................................................... 40 W

• Maximum Voltages and Currents

BVCBO Collector to Base Voltage .................................................................................... 200 V

BVCEO Collector to Emitter Voltage................................................................................... 60 V

BVEBO Emitter to Base Voltage ........................................................................................... 6 V

IC Collector Current ........................................................................................................... 4.5 A

°C)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

200

-

-

V

IC=5mA, IE=0

BVCEO

60

-

-

V

IC=5mA, IB=0

BVEBO

6

-

-

V

IE=5mA, IC=0

ICBO

-

-

0.1

mA

VCB=40V, IE=0

IEBO

-

-

0.1

mA

VEB=5V, IC=0

*VCE(sat)

-

0.5

1

V

IC=4A, IB=0.4A

*VBE(sat)

-

-

1.5

V

IC=4A, IB=0.4A

*hFE1

30

-

160

IC=1A, VCE=5V

*hFE2

25

-

-

IC=4A, VCE=5V

ft

-

10

-

MHz

VCE=5V, IC=1A

*Pulse Test : Pulse Width

≤380us, Duty Cycle≤2%