HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HN200103

Issued Date : 1999.08.01

Revised Date : 2002.10.25

Page No. : 1/7

HSC5094

HSMC Product Specification

HSC5094

NPN SILICON BIPOLAR TRANSISTOR

Description

The HSC5094 is a NPN Silicon Transistor designed for low noise

amplifier at VHF, UHF and CATV band.

Features

• Low Noise and High Gain: NF=1.4dB, Ga=12dB @ V

• High Power Gain: MAG=13.5dB @ V

Applications

• Low noise and high gain amplifiers

• Oscillator buffer amplifiers

Electrical Characteristics

• Maximum Ratings (Ta=25°C)

Parameters

Symbol

Min.

Typ.

Max.

Unit

Collector-Emitter Breakdown Voltage

V

CEO

-10

-

V

Collector-Base Breakdown Voltage

V

CBO

-18

-

V

Emitter-Base Breakdown Voltage

V

-

2.5

-

V

Collector Current

I

C

-*20

-mA

Collector Power Dissipation

P

C

-

150

-

mW

Junction Temperature

T

j

-

125

-

°C

Storage Temperature

T

stg

-50

-

125

°C

* Note: Here we define the point where the DC current gain drops off.

• Characterization Information (Ta=25°C)

Parameters

Conditions

Symbol

Min

Typ.

Max

Unit

Collector Cutoff Current

V

I

CBO

--

1

uA

Emitter Cutoff Current

V

I

EBO

--

1

uA

DC Current Gain

V

h

FE

50

80

200

V

-

7.6

-

GHz

Cutoff Frequency

V

f

T

-9-

GHz

V

-

1.4

-

dB

Minimum Noise Figure

V

NF

min

-1.6

-

dB

V

-

12

-

dB

Associated Gain

V

G

A

-

13.5

-

dB

V

-

12.8

-

dB

Insertion Gain |S

2

in 50 Ohm system

V

|S

2

-

13.5

-

dB

SOT-23