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GBPC5006T Datasheet(PDF) 1 Page - GeneSiC Semiconductor, Inc.

Part # GBPC5006T
Description  Single Phase Glass Passivated Silicon Bridge Rectifier
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Manufacturer  GENESIC [GeneSiC Semiconductor, Inc.]
Direct Link  http://www.genesicsemi.com/
Logo GENESIC - GeneSiC Semiconductor, Inc.

GBPC5006T Datasheet(HTML) 1 Page - GeneSiC Semiconductor, Inc.

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VRRM = 600 V - 1000 V
IO = 50 A
Features
GBPC-T/W Package
• Not ESD Sensitive
Mechanical Data
Weight: 19 grams or 0.67 ounces
Mounting torque: 20 inch-lbs max
GBPC5006T/W thru GBPC5010T/W
Maximum ratings at Tc = 25 °C, unless otherwise specified (GBPCXXXXT uses GBPC-T package while GBPCXXXXW
Polarity: Polarrity symbols marked on the body
Single Phase Glass Passivated
Silicon Bridge Rectifier
• High temperature soldering guaranteed: 260
⁰C/ 10
seconds at 5 lbs (2.3 kg) tension
• High surge current capability
Terminals: Either nickel plated 0.25". Faston lugs or copper leads
0.040" diameter.
Mounting position: Bolt down on heat-sink with silicone thermal
compound between bridge and mounting surface
• Universal 3-way terminals: snap on, wire-around, or P.C
board mounting
• Integrally molded heat sink provides low thermal resistance
for maximum heat dissipation
• Void-free junction soldering by using vacuum soldering
Case: Molded plastic with heat sink integrally mounted in the bridge
encapsulation
Parameter
Symbol
GBPC5006T/W
GBPC5008T/W
Unit
Repetitive peak reverse voltage
VRRM
600
800
V
RMS reverse voltage
VRMS
420
560
V
DC blocking voltage
VDC
600
800
V
Operating temperature
Tj
-55 to 150
-55 to 150
°C
Storage temperature
Tstg
-55 to 150
-55 to 150
°C
Parameter
Symbol
GBPC5006T/W
GBPC5008T/W
Unit
Maximum average forward rectified
current
IO
50.0
50.0
A
Peak forward surge current
IFSM
400
400
A
Maximum instantaneous forward
voltage drop per leg
1.2
1.2
55
500
500
Rating for fusing
I
2t
1200
1200
A
2sec
RMS isolation voltage from case to
leads
VISO
2500
2500
V
Typical junction capacitance
Cj
360
360
pF
Typical thermal resistance
R
ΘJC
1.2
1.2
°C/W
1200
500
VF
1.2
GBPC5010T/W
Single phase, half sine wave, 60 Hz, resistive or inductive load
For capacitive load derate current by 20%
Tc = 50 °C
50.0
single sine-wave
400
1 ms < tm < 8.3 ms
-55 to 150
1000
Ta = 25 °C
IF = 25 A
Conditions
1000
700
GBPC5010T/W
-55 to 150
Maximum ratings at Tc 25 C, unless otherwise specified (GBPCXXXXT uses GBPC T package while GBPCXXXXW
uses GBPC-W package)
Maximum DC reverse current at
rated DC blocking voltage per leg
IR
Ta = 125 °C
μA
5
2500
Conditions
360
1.2
V
Electrical characteristics at Tc = 25 °C, unless otherwise specified
www.genesicsemi.com/silicon-products/bridge-rectifiers/
1


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