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BF1208_2015 Datasheet(PDF) 10 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BF1208_2015 Datasheet(HTML) 10 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
10 / 22 page 9397 750 14254 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 16 March 2005 10 of 22 Philips Semiconductors BF1208 Dual N-channel dual gate MOSFET 8.1.2 Scattering parameters for amplifier A 8.1.3 Noise data for amplifier A VDS(A) =5V; VG2-S =4V; VDS(B) =VG1-S(B) =0V; ID(A) =19mA Fig 16. Amplifier A: output admittance as a function of frequency; typical values 001aac569 1 10−1 10 bos, gos (mS) 10−2 f (MHz) 10 103 102 bos gos Table 9: Scattering parameters for amplifier A VDS(A) =5V; VG2-S =4V; ID(A) = 19 mA; VDS(B) =0V;VG1-S(B) =0V; Tamb = 25 °C; typical values. f (MHz) s11 s21 s12 s22 Magnitude (ratio) Angle (deg) Magnitude (ratio) Angle (deg) Magnitude (ratio) Angle (deg) Magnitude (ratio) Angle (deg) 50 0.991 −3.86 3.08 175.91 0.0009 77.41 0.992 −1.41 100 0.990 −7.73 3.03 171.76 0.0019 78.10 0.991 −2.81 200 0.986 −15.43 2.99 163.68 0.0037 78.39 0.990 −5.57 300 0.980 −22.98 2.94 155.54 0.0054 73.53 0.989 −8.34 400 0.970 −30.44 2.89 147.55 0.0070 68.74 0.986 −11.08 500 0.960 −37.60 2.82 139.76 0.0085 63.64 0.983 −13.78 600 0.948 −44.62 2.75 132.16 0.0098 59.62 0.980 −16.45 700 0.935 −51.44 2.67 124.70 0.0110 55.09 0.977 −19.10 800 0.921 −58.04 2.58 117.39 0.0120 50.79 0.973 −21.69 900 0.908 −64.41 2.50 110.20 0.0128 46.62 0.970 −24.28 1000 0.894 −70.49 2.40 103.31 0.0135 42.78 0.967 −26.87 Table 10: Noise data for amplifier A VDS(A) =5V; VG2-S =4V; ID(A) = 19 mA; VDS(B) =0V; VG1-S(B) =0V; Tamb =25 °C; typical values; unless otherwise specified. f (MHz) NFmin (dB) Γ opt rn (Ω) ratio (deg) 400 1.3 0.718 16.06 0.683 800 1.4 0.677 37.59 0.681 |
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