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BF1109_2015 Datasheet(PDF) 5 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BF1109_2015 Datasheet(HTML) 5 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
5 / 16 page 1997 Dec 08 5 Philips Semiconductors Product specification N-channel dual-gate MOS-FETs BF1109; BF1109R; BF1109WR Fig.5 Output characteristics; typical values. VG2-S =4V. Tj =25 °C. handbook, halfpage 010 25 0 5 10 15 20 24 6 8 MDA613 ID (mA) VDS (V) VG1 = 1.6 V 1.3 V 1.2 V 1.1 V 1.5 V 1.4 V 1 V Fig.6 Transfer characteristics; typical values. VDS =9V. Tj =25 °C. handbook, halfpage 0 40 20 30 10 0 0.5 2.5 MDA614 1 1.5 2 VG1 (V) ID (mA) 2 V 1 V VG2-S = 4 V 3.5 V 2.5 V 1.5 V 3 V Fig.7 Forward transfer admittance as a function of drain current; typical values. VDS =9V. Tj =25 °C. handbook, halfpage 0 102030 40 30 10 0 20 MDA615 ID (mA) yfs (mS) 3.5 V 3 V 2.5 V 2 V VG2-S = 4 V Fig.8 Drain current as a function of gate 2 voltage; typical values. (1) VDS =9V. (2) VDS =7V. (3) VDS =5V. (4) VDS =3V. handbook, halfpage 0 16 8 12 4 0 15 MDA616 23 4 ID (mA) VG2-S (V) (1) (4) (3) (2) |
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