BF1100WR_2015 datasheet(8/14 Pages) JMNIC

Part #	BF1100WR_2015

Description	Dual-gate MOS-FET

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Manufacturer	JMNIC [Quanzhou Jinmei Electronic Co.,Ltd.]

Direct Link	http://www.jmnic.com

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8 / 14 page

1995 Apr 25

8

Philips Semiconductors

Product speciﬁcation

Dual-gate MOS-FET

BF1100WR

Fig.14 Gate 1 current as a function of gate 2 voltage;

typical values.

VDS =9V.

RG1 = 180 kΩ (connected to VGG); Tj =25 °C.

handbook, halfpage

02

46

50

40

30

10

0

20

MLD167

I G1

(

µA)

V

(V)

G2 S

8 V

7 V

6 V

5 V

4 V

V

= 9 V

GG

Fig.15 Gate 1 current as a function of gate 2 voltage;

typical values.

VDS =12V.

RG1 = 250 kΩ (connected to VGG); Tj =25 °C.

handbook, halfpage

02

46

50

40

30

10

0

20

MLD168

I G1

(

µA)

V

(V)

G2 S

11 V

10 V

9 V

8 V

7 V

V

= 12 V

GG

Fig.16 Drain current as a function of the gate 2

voltage; typical values; see Fig.26.

VDS =9V.

RG1 = 180 kΩ (connected to VGG); Tj =25 °C.

handbook, halfpage

024

6

0

16

MLD169

12

8

4

I D

(mA)

8 V

7 V

6 V

5 V

4 V

V

= 9 V

GG

V

(V)

G2 S

VDS =12V.

RG1 = 250 kΩ (connected to VGG); Tj =25 °C.

Fig.17 Drain current as a function of the gate 2

voltage; typical values; see Fig.26.

handbook, halfpage

024

6

0

16

MLD170

12

8

4

I D

(mA)

11 V

10 V

9 V

8 V

7 V

V

= 12 V

GG

V

(V)

G2 S

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BF1100WR_2015 Datasheet(PDF) 8 Page - Quanzhou Jinmei Electronic Co.,Ltd.

BF1100WR_2015 Datasheet(HTML) 8 Page - Quanzhou Jinmei Electronic Co.,Ltd.

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