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BF991_2015 Datasheet(PDF) 4 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BF991_2015 Datasheet(HTML) 4 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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4 / 7 page  NXP Semiconductors Product specification N-channel dual-gate MOS-FET BF991 STATIC CHARACTERISTICS Tj =25 °C unless otherwise specified. DYNAMIC CHARACTERISTICS Measuring conditions (common source): ID = 10 mA; VDS =10V; VG2-S =4V; Tamb =25 °C. Note 1. Crystal mounted in a SOT103 package. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT IG1-SS gate 1 cut-off current VG1-S =5V; VG2-S =VDS =0 − 50 nA IG2-SS gate 2 cut-off current VG2-S =5V; VG1-S =VDS =0 − 50 nA IDSS drain current VDS =10V; VG1-S = 0; VG2-S =4V 4 25 mA V(BR)G1-SS gate 1-source breakdown voltage IG1-SS = 10 mA; VG2-S =VDS =0 6 20 V V(BR)G2-SS gate 2-source breakdown voltage IG2-SS = 10 mA; VG1-S =VDS =0 6 20 V V(P)G1-S gate 1-source cut-off voltage ID =20 µA; VDS = 10 V; VG2-S =4V −−2.5 V V(P)G2-S gate 2-source cut-off voltage ID =20 µA; VDS = 10 V; VG1-S =0 −−2.5 V SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT transfer admittance f = 1 kHz 10 14 − mS Cig1-s input capacitance at gate 1 f = 1 MHz − 2.1 − pF Cig2-s input capacitance at gate 2 f = 1 MHz − 1 − pF Crs feedback capacitance f = 1 MHz − 20 − fF Cos output capacitance f = 1 MHz − 1.1 − pF F noise figure f = 100 MHz; GS = 1 mS; BS =BSopt − 0.7 1.7 dB f = 200 MHz; GS = 2 mS; BS =BSopt − 12dB Gtr transducer gain; note 1 f = 100 MHz; GS = 1 mS; BS =BSopt; GL = 0.5 mS; BL =BLopt − 29 − dB f = 200 MHz; GS = 2 mS; BS =BSopt; GL = 0.5 mS; BL =BLopt − 26 − dB Y fs Rev. 03 - 20 November 2007 4 of 7 |
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