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GA05JT03-46 Datasheet(PDF) 1 Page - GeneSiC Semiconductor, Inc.

Part # GA05JT03-46
Description  Normally ??OFF Silicon Carbide Junction Transistor
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Manufacturer  GENESIC [GeneSiC Semiconductor, Inc.]
Direct Link  http://www.genesicsemi.com/
Logo GENESIC - GeneSiC Semiconductor, Inc.

GA05JT03-46 Datasheet(HTML) 1 Page - GeneSiC Semiconductor, Inc.

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GA05JT03-46
Dec 2014
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-junction-transistors/
Pg 1 of 10
Normally
– OFF Silicon Carbide
Junction Transistor
Features
Package
 225°C maximum operating temperature
 Gate Oxide Free SiC Switch
 Exceptional Safe Operating Area
 Excellent Gain Linearity
 Temperature Independent Switching Performance
 Low Output Capacitance
 Positive Temperature Coefficient of R
DS,ON
 Suitable for Connecting an Anti-parallel Diode
 RoHS Compliant
TO-46
Advantages
Applications
 Compatible with Si MOSFET/IGBT Gate Drive ICs
 > 20 µs Short-Circuit Withstand Capability
 Lowest-in-class Conduction Losses
 High Circuit Efficiency
 Minimal Input Signal Distortion
 High Amplifier Bandwidth
 Down Hole Oil Drilling
 Geothermal Instrumentation
 Solenoid Actuators
 General Purpose High-Temperature Switching
 Amplifiers
 Solar Inverters
 Switched-Mode Power Supply (SMPS)
 Power Factor Correction (PFC)
Table of Contents
Section I: Absolute Maximum Ratings ...........................................................................................................1
Section II: Electrical Characteristics...............................................................................................................2
Section III: Dynamic Electrical Characteristics .............................................................................................2
Section IV: Figures ...........................................................................................................................................3
Section V: Driving the GA05JT03-46...............................................................................................................7
Section VI: Package Dimensions ................................................................................................................. 10
Section VII: SPICE Model Parameters ......................................................................................................... 11
Section I: Absolute Maximum Ratings
Parameter
Symbol
Conditions
Value
Unit
Notes
Drain
– Source Voltage
VDS
VGS = 0 V
300
V
Continuous Drain Current
ID
TJ = 225°C, TC = 25°C
5.8
A
Fig. 21
Continuous Gate Current
IGM
0.5
A
Turn-Off Safe Operating Area
RBSOA
TVJ = 225°C, IG = 0.5 A,
Clamped Inductive Load
ID,max = 9
@ VDS ≤ VDSmax
A
Fig. 19
Short Circuit Safe Operating Area
SCSOA
TVJ = 225°C, IG = 0.5 A, VDS = 200 V,
Non Repetitive
>20
µs
Reverse Gate
– Source Voltage
VSG
30
V
Reverse Drain
– Source Voltage
VSD
25
V
Power Dissipation
Ptot
TJ = 225°C, TC = 25°C
20
W
Fig. 16
Storage Temperature
Tstg
-55 to 225
°C
D
S
G
D
S
G
VDS
=
300 V
RDS(ON)
=
240 m
Ω
ID (Tc = 25°C) =
9 A
hFE (Tc = 25°C) =
110


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