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GA05JT03-46 Datasheet(PDF) 1 Page - GeneSiC Semiconductor, Inc. |
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GA05JT03-46 Datasheet(HTML) 1 Page - GeneSiC Semiconductor, Inc. |
1 / 11 page GA05JT03-46 Dec 2014 http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-junction-transistors/ Pg 1 of 10 Normally – OFF Silicon Carbide Junction Transistor Features Package 225°C maximum operating temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity Temperature Independent Switching Performance Low Output Capacitance Positive Temperature Coefficient of R DS,ON Suitable for Connecting an Anti-parallel Diode RoHS Compliant TO-46 Advantages Applications Compatible with Si MOSFET/IGBT Gate Drive ICs > 20 µs Short-Circuit Withstand Capability Lowest-in-class Conduction Losses High Circuit Efficiency Minimal Input Signal Distortion High Amplifier Bandwidth Down Hole Oil Drilling Geothermal Instrumentation Solenoid Actuators General Purpose High-Temperature Switching Amplifiers Solar Inverters Switched-Mode Power Supply (SMPS) Power Factor Correction (PFC) Table of Contents Section I: Absolute Maximum Ratings ...........................................................................................................1 Section II: Electrical Characteristics...............................................................................................................2 Section III: Dynamic Electrical Characteristics .............................................................................................2 Section IV: Figures ...........................................................................................................................................3 Section V: Driving the GA05JT03-46...............................................................................................................7 Section VI: Package Dimensions ................................................................................................................. 10 Section VII: SPICE Model Parameters ......................................................................................................... 11 Section I: Absolute Maximum Ratings Parameter Symbol Conditions Value Unit Notes Drain – Source Voltage VDS VGS = 0 V 300 V Continuous Drain Current ID TJ = 225°C, TC = 25°C 5.8 A Fig. 21 Continuous Gate Current IGM 0.5 A Turn-Off Safe Operating Area RBSOA TVJ = 225°C, IG = 0.5 A, Clamped Inductive Load ID,max = 9 @ VDS ≤ VDSmax A Fig. 19 Short Circuit Safe Operating Area SCSOA TVJ = 225°C, IG = 0.5 A, VDS = 200 V, Non Repetitive >20 µs Reverse Gate – Source Voltage VSG 30 V Reverse Drain – Source Voltage VSD 25 V Power Dissipation Ptot TJ = 225°C, TC = 25°C 20 W Fig. 16 Storage Temperature Tstg -55 to 225 °C D S G D S G VDS = 300 V RDS(ON) = 240 m Ω ID (Tc = 25°C) = 9 A hFE (Tc = 25°C) = 110 |
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