HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HE6850

Issued Date : 1994.07.29

Revised Date : 2002.10.25

Page No. : 1/3

HMBT5087

HSMC Product Specification

HMBT5087

PNP EPITAXIAL PLANAR TRANSISTOR

Description

The HMBT5087 is designed for low noise, high gain, general purpose

amplifier applications.

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature ........................................................................................... -55 ~ +150

°C

Junction Temperature.................................................................................... +150

°C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Ta=25

°C) ............................................................................... 225 mW

• Maximum Voltages and Currents (Ta=25°C)

VCBO Collector to Base Voltage ........................................................................................ -50 V

VCEO Collector to Emitter Voltage..................................................................................... -50 V

VEBO Emitter to Base Voltage .............................................................................................. -3V

IC Collector Current ........................................................................................................ -50 mA

°C)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

-50

-

-

V

IC=-100uA

BVCEO

-50

-

-

V

IC=-1mA

BVEBO

-3

-

-

V

IE=-10uA

ICBO1

-

-

-10

nA

VCB=-10V

ICBO2

-

-

-50

nA

VCB=-35V

*VCE(sat)

-

-

-300

mV

IC=-10mA, IB=-1mA

*VBE(sat)

-

-

-850

mV

IC=-10mA, IB=-1mA

*hFE1

250

-

800

VCE=-5V, IC=-0.1mA

*hFE2

250

-

-

VCE=-5V, IC=-1mA

*hFE3

250

-

-

VCE=-5V, IC=-10mA

fT

40

-

-

MHz

VCE=-5V, IC=-0.5mA, f=100MHz

Cob

-

-

4.0

pF

VCB=-5V, f=100KHz

*Pulse Test: Pulse Width

≤380us, Duty Cycle≤2%

SOT-23