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FR20B02 Datasheet(PDF) 1 Page - GeneSiC Semiconductor, Inc. |
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FR20B02 Datasheet(HTML) 1 Page - GeneSiC Semiconductor, Inc. |
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1 / 3 page  VRRM = 50 V - 600 V IF = 20 A Features • High Surge Capability DO-5 Package • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 3. Stud is base. Parameter Symbol FR20A(R)02 FR20B(R)02 FR20D(R)02 FR20G(R)02 Unit Repetitive peak reverse voltage VRRM 50 100 200 400 V RMS reverse voltage VRMS 35 70 140 280 V • Types from 50 V to 600 V VRRM 2. Reverse polarity (R): Stud is anode. FR20A02 thru FR20JR02 Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Conditions Silicon Fast Recovery Diode FR20J(R)02 600 420 DC blocking voltage VDC 50 100 200 400 V Continuous forward current IF 20 20 20 20 A Operating temperature Tj -55 to 150 -55 to 150 -55 to 150 -55 to 150 °C Storage temperature Tstg -55 to 150 -55 to 150 -55 to 150 -55 to 150 °C Parameter Symbol FR20A(R)02 FR20B(R)02 FR20D(R)02 FR20G(R)02 Unit Diode forward voltage 1.0 1.0 1.0 1.0 25 25 25 25 μA 10 10 10 10 mA Recovery Time Maximum reverse recovery time TRR 200 200 200 200 nS Thermal characteristics Thermal resistance, junction - case RthJC 0.6 0.6 0.6 0.6 °C/W Reverse current IR VF 250 IF=0.5 A, IR=1.0 A, IRR= 0.25 A VR = 50 V, Tj = 150 °C V VR = 50 V, Tj = 25 °C IF = 20 A, Tj = 25 °C TC ≤ 100 °C Conditions 250 250 TC = 25 °C, tp = 8.3 ms Electrical characteristics, at Tj = 25 °C, unless otherwise specified Surge non-repetitive forward current, Half Sine Wave IF,SM A 250 250 -55 to 150 -55 to 150 1.0 25 10 250 0.6 FR20J(R)02 600 20 www.genesicsemi.com/silicon-products/fast-recovery-rectifiers/ 1 |
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