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2SD2061_2015 Datasheet(PDF) 1 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2SD2061_2015 Datasheet(HTML) 1 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
1 / 3 page Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD2061 DESCRIPTION ・ ・With TO-220Fa package ・Low saturation voltage ・Excellent DC current gain characteristics ・Wide safe operating area APPLICATIONS ・For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 emitter Fig.1 simplified outline (TO-220Fa) and symbol ABSOLUTE MAXIMUM RATINGS AT Tc=25℃ SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 80 V VCEO Collector-emitter voltage Open base 60 V VEBO Emitter-base voltage Open collector 5 V IC Collector current (DC) 3 A ICM Collector current-Peak 6 A PC Collector power dissipation TC=25℃ 30 W PC Collector power dissipation Ta=25℃ 2 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ JMnic |
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