Electronic Components Datasheet Search |
|
PSMN2R8-40BS Datasheet(PDF) 6 Page - NXP Semiconductors |
|
PSMN2R8-40BS Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 15 page PSMN2R8-40BS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 1 — 20 March 2012 6 of 15 NXP Semiconductors PSMN2R8-40BS N-channel 40 V 2.9 m Ω standard level MOSFET in D2PAK 7. Characteristics Table 7. Characteristics Tested to JEDEC standards where applicable. Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS =0V; Tj = -55 °C 36 --V ID = 250 µA; VGS =0V; Tj = 25 °C 40 --V VGS(th) gate-source threshold voltage ID =1mA; VDS =VGS; Tj =-55 °C; see Figure 10; see Figure 11 --4.6 V ID =1mA; VDS =VGS; Tj =175 °C; see Figure 10; see Figure 12 1 --V ID =1mA; VDS =VGS; Tj =25 °C; see Figure 10; see Figure 11 2.3 34V IDSS drain leakage current VDS =40V; VGS =0V; Tj =25°C - 0.3 10 µA VDS =40V; VGS =0V; Tj = 125 °C - - 150 µA IGSS gate leakage current VGS =20V; VDS =0V; Tj = 25 °C - 10 100 nA VGS =-20 V; VDS =0V; Tj = 25 °C - 10 100 nA RDSon drain-source on-state resistance VGS =10V; ID =10A; Tj =100 °C; see Figure 13; see Figure 14 - 3.58 4.2 m Ω VGS =10V; ID =10A; Tj =175 °C; see Figure 13; see Figure 14 - 4.94 5.8 m Ω VGS =10V; ID =10A; Tj =25°C; see Figure 14 - 2.47 2.9 m Ω RG internal gate resistance (AC) f = 1 MHz - 0.7 - Ω Dynamic characteristics QG(tot) total gate charge ID =0A; VDS =0 V; VGS =10V - 61 - nC ID =10A; VDS =20V; VGS =10V; see Figure 15; see Figure 16 -71 -nC QGS gate-source charge - 21 - nC QGS(th) pre-threshold gate-source charge -13 -nC QGS(th-pl) post-threshold gate-source charge -8.5 -nC QGD gate-drain charge - 17 - nC VGS(pl) gate-source plateau voltage ID =10A; VDS = 20 V; see Figure 15; see Figure 16 -4.7 -V Ciss input capacitance VDS =20V; VGS = 0 V; f = 1 MHz; Tj = 25 °C; see Figure 17 - 4491 - pF Coss output capacitance - 937 - pF Crss reverse transfer capacitance - 464 - pF td(on) turn-on delay time VDS =20V; RL =0.8 Ω; VGS =10 V; RG(ext) =4.7 Ω -28 -ns tr rise time - 29 - ns td(off) turn-off delay time - 52 - ns tf fall time - 23 - ns |
Similar Part No. - PSMN2R8-40BS |
|
Similar Description - PSMN2R8-40BS |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |