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NTD4809NA Datasheet(PDF) 2 Page - ON Semiconductor

Part # NTD4809NA
Description  25 V, 58 A, Single N- Channel, DPAK/IPAK
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NTD4809NA Datasheet(HTML) 2 Page - ON Semiconductor

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NTD4809NA
http://onsemi.com
2
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Junction-to-Case (Drain)
RqJC
2.9
°C/W
Junction-to-T AB (Drain)
RqJC- TAB
3.5
Junction-to-Ambient - Steady State (Note 1)
RqJA
74
Junction-to-Ambient - Steady State (Note 2)
RqJA
116
1. Surface-mounted on FR4 board using 1 in sq pad size, 1 oz Cu.
2. Surface-mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
30
V
Drain-to-Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
25
mV/
°C
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V,
VDS = 24 V
TJ = 25°C
1.0
mA
TJ = 125°C
10
Gate-to-Source Leakage Current
IGSS
VDS = 0 V, VGS = "20 V
"100
nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = 250 mA
1.5
2.5
V
Negative Threshold Temperature Coefficient
VGS(TH)/TJ
5.7
mV/
°C
Drain-to-Source On Resistance
RDS(on)
VGS = 10 to
11.5 V
ID = 30 A
7.0
9.0
m
W
ID = 15 A
7.0
VGS = 4.5 V
ID = 30 A
12
14
ID = 15 A
11
Forward Transconductance
gFS
VDS = 15 V, ID = 15 A
9.0
S
CHARGES AND CAPACITANCES
Input Capacitance
Ciss
VGS = 0 V, f = 1.0 MHz,
VDS = 12 V
1456
pF
Output Capacitance
Coss
315
Reverse Transfer Capacitance
Crss
200
Total Gate Charge
QG(TOT)
VGS = 4.5 V, VDS = 15 V,
ID = 30 A
11
13
nC
Threshold Gate Charge
QG(TH)
2.5
Gate-to-Source Charge
QGS
4.8
Gate-to-Drain Charge
QGD
5.0
Total Gate Charge
QG(TOT)
VGS = 11.5 V, VDS = 15 V,
ID = 30 A
25
nC
SWITCHING CHARACTERISTICS (Note 4)
Turn-On Delay Time
td(on)
VGS = 4.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
12.3
ns
Rise Time
tr
21.3
Turn-Of f Delay Time
td(off)
15.1
Fall Time
tf
5.3
Turn-On Delay Time
td(on)
VGS = 11.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
7.0
ns
Rise Time
tr
22.7
Turn-Of f Delay Time
td(off)
25.3
Fall Time
tf
2.8
3. Pulse Test: Pulse Width
≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.


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