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2N1711 Datasheet(PDF) 1 Page - Microsemi Corporation

Part No. 2N1711
Description  NPN LOW POWER SILICON TRANSISTOR
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Maker  MICROSEMI [Microsemi Corporation]
Homepage  http://www.microsemi.com
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TECHNICAL DATA
NPN LOW POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/225
Devices
Qualified Level
2N1711
2N1890
JAN
JANTX
MAXIMUM RATINGS
Ratings
Symbol
2N1711
2N1890
Unit
Collector-Base Voltage
VCBO
75
100
Vdc
Emitter-Base Voltage
VEBO
7.0
Vdc
Collector Current
IC
500
mAdc
Total Power Dissipation
@ TA = +25
0C (1)
@ TC = +25
0C (2)
PT
0.8
3.0
W
W
Operating & Storage Junction Temperature Range
TJ, Tstg
-65 to +200
0C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max.
Unit
Thermal Impedance
ZθJX
58
0C/W
1) Derate linearly 4.57 mW/
0C for TA > 250C
2) Derate linearly 17.2 mW/
0C for TC > 250C
TO-5*
*See appendix A for package
outline
ELECTRICAL CHARACTERISTICS (TA = 25
0C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
IC = 100 µAdc
2N1711, S
2N1890, S
V(BR)CBO
75
100
Vdc
Collector-Emitter Breakdown Voltage
RBE = 10 Ω, IC = 100 mAdc
2N1711, S
2N1890, S
V(BR)CER
50
80
Vdc
Collector-Emitter Breakdown Voltage
IC = 30 mAdc
2N1711, S
2N1890, S
V(BR)CEO
30
60
Vdc
Emitter-Base Breakdown Voltage
IE = 100 µAdc
V(BR)EBO
7.0
Vdc
Collector-Base Cutoff Current
VCB = 60 Vdc
2N1711
VCB = 80 Vdc
2N1890
ICBO
10
10
ηAdc
Emitter-Base Cutoff Current
VEB = 5.0 Vdc
IEBO
5.0
ηAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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