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2SC3149_2014 Datasheet(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2SC3149_2014 Datasheet(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
2 / 4 page Product Specification www.jmnic.com 2 Silicon NPN Power Transistors 2SC3149 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=5mA ; RBE=∞ 800 V V(BR)CBO Collector-base breakdown voltage IC=1mA ; IE=0 900 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ; IB=0 7 V VCEsat Collector-emitter saturation voltage IC=0.75A; IB=0.15A 2.0 V VBEsat Base-emitter saturation voltage IC=0.75A; IB=0.15A 1.5 V ICBO Collector cut-off current VCB=800V ;IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 10 μA hFE-1 DC current gain IC=0.1A ; VCE=5V 10 40 hFE-2 DC current gain IC=0.5A ; VCE=5V 8 fT Transition frequency IC=0.1A ; VCE=10V 15 MHz COB Output capacitance f=10MHz ; VCB=10V 30 pF Switching times ton Turn-on time 1.0 μs tstg Storage time 3.0 μs tf Fall time VCC=400V; IC=1A IB1=0.2A;IB2=-0.4A; RL=400Ω 0.7 μs hFE-1 classifications K L M 10-20 15-30 20-40 |
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