SANGDEST

MICROELECTRONICS

Technical Data

Green Products

Data Sheet N0143 Rev. -

• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113

(86) 25-87123907

•

• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •

MUR640AX

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Symbol

MUR640AX

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

400

V

Average Rectified Output Current

Io

6.0

A

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

rated load (JEDEC Method)

150

A

Forward Voltage (per element)

1.3

V

Peak Reverse Current

At Rated DC Blocking Voltage

5.0

100

µA

Maximum Reverse Recovery Time (Note 1)

Trr

50

ns

Typical Junction Capacitance (Note 2)

Cj

60

pF

Max. Voltage Rate of Change

dv/dt

10,000

V/µs

Typical Thermal Resistance Junction to Ambient (Note 3)

25

K/W

Storage Temperature Range

-55 to +150

°C

Max. Junction Temperature

-55 to +150

°C

Approximate Weight

wt

1.02

g

Case Style

DO-201AD

2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

3. Mount on Cu-Pad Size 16mm×16mm on P.C.B.