FGI3236 datasheet(2/10 Pages) FAIRCHILD

Part #	FGI3236

Description	EcoSPARK 320mJ, 360V, N-Channel Ignition IGBT

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

Direct Link	http://www.fairchildsemi.com

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FGB3236_F085 / FGI3236_F085 Rev. A

1

www.fairchildsemi.com

2

Package Marking and Ordering Information

Electrical Characteristics T

A = 25°C unless otherwise noted

Off State Characteristics

On State Characteristics

Symbol

Parameter

Ratings

Units

BVCER

Collector to Emitter Breakdown Voltage (IC = 1mA)

360

V

BVECS

Emitter to Collector Voltage - Reverse Battery Condition (IC = 10mA)

24

V

ESCIS25 Self Clamping InductiveSwitchingEnergy(ISCIS=14.7A, L= 3.0mHy,TJ=25°C)

320

mJ

ESCIS150 Self Clamping Inductive Switching Energy (ISCIS = 10.4A, L = 3.0mHy, TJ = 150°C)

160

mJ

IC25

Collector Current Continuous, at VGE = 4.0V, TC = 25°C

44

A

IC110

Collector Current Continuous, at VGE = 4.0V, TC = 110°C

27

A

VGEM

Gate to Emitter Voltage Continuous

±10

V

PD

Power Dissipation Total, at TC = 25°C

187

W

Power Dissipation Derating, for TC > 25oC1.25

W/oC

TJ

Operating Junction Temperature Range

-40 to +175

oC

TSTG

Storage Junction Temperature Range

-40 to +175

oC

TL

Max. Lead Temp. for Soldering (Leads at 1.6mm from case for 10s)

300

oC

TPKG

Max. Lead Temp. for Soldering (Package Body for 10s)

260

oC

ESD

Electrostatic Discharge Voltage at100pF, 1500

Ω

4kV

Device Marking

Device

Package

Reel Size

Tape Width

Quantity

FGB3236

FGB3236_F085

TO263

330mm

24mm

800 units

FGI3236

FGI3236_F085

TO262

Tube

NA

50 units

Symbol

Parameter

Test Conditions

Min

Typ

Max Units

BVCER Collector to Emitter Breakdown Voltage

ICE = 2mA, VGE = 0,

RGE = 1KΩ, See Fig. 15

TJ = -40 to 150oC

330

363

390

V

BVCES

Collector to Emitter Breakdown Voltage

ICE = 10mA, VGE = 0V,

RGE = 0,

TJ = -40 to 150oC

350

378

410

V

BVECS

Emitter to Collector Breakdown Voltage

ICE = -75mA, VGE = 0V,

TC = 25°C

30

-

V

BVGES Gate to Emitter Breakdown Voltage

IGES = ±2mA

±12

±14

-

V

ICES

Collector to Emitter Leakage Current

VCES = 250V,

See Fig. 11

TC = 25oC-

-

25

µA

TC = 150oC-

-

1

mA

IECS

Emitter to Collector Leakage Current

VEC = 24V,

See Fig.11

TC = 25oC

-

1

mA

TC = 150oC-

-

40

R1

Series Gate Resistance

-

100

-

Ω

R2

Gate to Emitter Resistance

10K

-

30K

Ω

VCE(SAT) Collector to Emitter Saturation Voltage ICE = 6A, VGE = 4V,

TC=25oC,

See Fig. 3

-1.14

1.4

V

VCE(SAT) Collector to Emitter Saturation Voltage ICE = 10A, VGE = 4.5V,

TC = 150oC,

See Fig. 4

-1.32

1.7

V

VCE(SAT) Collector to Emitter Saturation Voltage ICE = 15A, VGE = 4.5V,

TC = 150oC

-

1.61

2.05

V

ICE(ON) Collector to Emitter On State Current

VGE = 5V, VCE = 5V

50

-

A

Device Maximum Ratings T

A = 25°C unless otherwise noted

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