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FGI3236 Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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FGI3236 Datasheet(HTML) 2 Page - Fairchild Semiconductor |
2 / 10 page FGB3236_F085 / FGI3236_F085 Rev. A 1 www.fairchildsemi.com 2 Package Marking and Ordering Information Electrical Characteristics T A = 25°C unless otherwise noted Off State Characteristics On State Characteristics Symbol Parameter Ratings Units BVCER Collector to Emitter Breakdown Voltage (IC = 1mA) 360 V BVECS Emitter to Collector Voltage - Reverse Battery Condition (IC = 10mA) 24 V ESCIS25 Self Clamping InductiveSwitchingEnergy(ISCIS=14.7A, L= 3.0mHy,TJ=25°C) 320 mJ ESCIS150 Self Clamping Inductive Switching Energy (ISCIS = 10.4A, L = 3.0mHy, TJ = 150°C) 160 mJ IC25 Collector Current Continuous, at VGE = 4.0V, TC = 25°C 44 A IC110 Collector Current Continuous, at VGE = 4.0V, TC = 110°C 27 A VGEM Gate to Emitter Voltage Continuous ±10 V PD Power Dissipation Total, at TC = 25°C 187 W Power Dissipation Derating, for TC > 25oC1.25 W/oC TJ Operating Junction Temperature Range -40 to +175 oC TSTG Storage Junction Temperature Range -40 to +175 oC TL Max. Lead Temp. for Soldering (Leads at 1.6mm from case for 10s) 300 oC TPKG Max. Lead Temp. for Soldering (Package Body for 10s) 260 oC ESD Electrostatic Discharge Voltage at100pF, 1500 Ω 4kV Device Marking Device Package Reel Size Tape Width Quantity FGB3236 FGB3236_F085 TO263 330mm 24mm 800 units FGI3236 FGI3236_F085 TO262 Tube NA 50 units Symbol Parameter Test Conditions Min Typ Max Units BVCER Collector to Emitter Breakdown Voltage ICE = 2mA, VGE = 0, RGE = 1KΩ, See Fig. 15 TJ = -40 to 150oC 330 363 390 V BVCES Collector to Emitter Breakdown Voltage ICE = 10mA, VGE = 0V, RGE = 0, TJ = -40 to 150oC 350 378 410 V BVECS Emitter to Collector Breakdown Voltage ICE = -75mA, VGE = 0V, TC = 25°C 30 - - V BVGES Gate to Emitter Breakdown Voltage IGES = ±2mA ±12 ±14 - V ICES Collector to Emitter Leakage Current VCES = 250V, See Fig. 11 TC = 25oC- - 25 µA TC = 150oC- - 1 mA IECS Emitter to Collector Leakage Current VEC = 24V, See Fig.11 TC = 25oC - - 1 mA TC = 150oC- - 40 R1 Series Gate Resistance - 100 - Ω R2 Gate to Emitter Resistance 10K - 30K Ω VCE(SAT) Collector to Emitter Saturation Voltage ICE = 6A, VGE = 4V, TC=25oC, See Fig. 3 -1.14 1.4 V VCE(SAT) Collector to Emitter Saturation Voltage ICE = 10A, VGE = 4.5V, TC = 150oC, See Fig. 4 -1.32 1.7 V VCE(SAT) Collector to Emitter Saturation Voltage ICE = 15A, VGE = 4.5V, TC = 150oC - 1.61 2.05 V ICE(ON) Collector to Emitter On State Current VGE = 5V, VCE = 5V 50 - - A Device Maximum Ratings T A = 25°C unless otherwise noted |
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