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2SB1149_2014 Datasheet(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2SB1149_2014 Datasheet(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
2 / 3 page JMnic Product Specification 2 Silicon PNP Power Transistors 2SB1149 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEsat Collector-emitter saturation voltage IC=-1.5A ;IB=-1.5mA -0.9 -1.2 V VBEsat Base-emitter saturation voltage IC=-1.5A ;IB=-1.5mA -1.5 -2.0 V ICBO Collector cut-off current VCB=-100V; IE=0 -10 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -2.0 mA hFE-1 DC current gain IC=-1.5A ; VCE=-2V 2000 15000 hFE-2 DC current gain IC=-3A ; VCE=-2V 1000 Switching times ton Turn-on time 0.5 μs tstg Storage time 2.0 μs tf Fall time IC=-1.5A ; IB1=-IB2=-1.5mA VCC≈-40V;RL=27Ω 1.0 μs hFE-1 Classifications M L K 2000-5000 3000-7000 5000-15000 |
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