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INA-02186-BLK Datasheet(PDF) 2 Page - Agilent(Hewlett-Packard) |
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INA-02186-BLK Datasheet(HTML) 2 Page - Agilent(Hewlett-Packard) |
2 / 6 page 6-97 INA-02184, -02186 Absolute Maximum Ratings Parameter Absolute Maximum[1] Device Current 50 mA Power Dissipation[2,3,4] 400 mW RF Input Power +13dBm Junction Temperature +150 °C Storage Temperature –65 to 150 °C Thermal Resistance[2]: θ jc = 90°C/W — INA-02184 θ jc = 100°C/W — INA-02186 Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE= 25°C. 3. Derate at 11.1 mW/ °C for T C > 144 °CforINA-02184. 4. Derate at 10 mW/ °C for T C > 110°C for INA-02186. GP Power Gain (|S21| 2) f = 0.5 GHz dB 29.0 31.0 29.0 31.0 ∆GP Gain Flatness f = 0.01 to 1.0 GHz dB ± 2.0 ± 2.0 f3 dB 3 dB Bandwidth[2] GHz 0.8 0.8 ISO Reverse Isolation (|S12| 2) f = 0.01 to 1.0 GHz dB 39 39 Input VSWR (Max over Freq. Range) f = 0.01 to 1.0 GHz 1.5 2.0 Output VSWR (Max over Freq. Range) f = 0.01 to 1.0 GHz 1.7 1.7 NF 50 Ω Noise Figure f = 0.5 GHz dB 2.0 2.0 P1 dB Output Power at 1 dB Gain Compression f = 0.5 GHz dBm 11 11 IP3 Third Order Intercept Point f = 0.5 GHz dBm 23 23 tD Group Delay f = 0.5 GHz psec 330 350 Vd Device Voltage V 4.0 5.5 7.0 4.0 5.5 7.0 dV/dT Device Voltage Temperature Coefficient mV/ °C +10 +10 Notes: 1. The recommended operating current range for this device is 30 to 40 mA. Typical performance as a function of current is on the following page. 2. Referenced from 10 MHz Gain (GP). INA-02184, -02186 Electrical Specifications[1], T A = 25°C Symbol Parameters and Test Conditions: I d = 35 mA, ZO = 50 Ω Units Min. Typ. Max. Min. Typ. Max. VSWR INA-02184, -02186 Part Number Ordering Information Part Number No. of Devices Container INA-02184-TR1 1000 7" Reel INA-02184-BLK 100 Antistatic Bag INA-02186-TR1 1000 7" Reel INA-02186-BLK 100 Antistatic Bag For more information, see “Tape and Reel Packaging for Semiconductor Devices”. INA-02184 INA-02186 |
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