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HMMC-5038 Datasheet(PDF) 3 Page - Agilent(Hewlett-Packard) |
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HMMC-5038 Datasheet(HTML) 3 Page - Agilent(Hewlett-Packard) |
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3 / 5 page  6-55 Applications The HMMC-5038 low noise amplifier (LNA) is designed for use in digital radio communica- tion systems and point-to- multipoint links that operate within the 37 GHz to 40 GHz frequency band. High gain and low noise temperature make it ideally suited as a front-end gain stage in the receiver. The MMIC solution is a cost effective alternative to hybrid assemblies. Biasing and Operation The recommended DC bias condition is with all drains connected to single 3 volt supply and all gates connected to an adjustable negative voltage supply as shown in Figure 1(a). The gate voltage is adjusted for a total drain supply current of typically 120 mA. Reducing the current in stages 3 and 4 will reduce the overall gain. The gain can be adjusted further by altering the current through stage 2 with little affect on noise figure. Optimum noise figure is realized with VD1= 3 to 4 volts and ID1 = 20 to 25 mA. The second, third, and fourth stage DC drain bias lines are connected internally and there- fore require only a single bond wire. An additional bond wire is needed for the first stage DC drain bias, VD1. The third and fourth stage DC gate bias lines are connected internally. A total of three DC gate bond wires are required: One for VG1, one for VG2, and one for the VG3-to-VG4 connection as shown in Figure 1. A DC blocking capacitor is needed in the RF input transmis- sion line only if there is DC voltage present. The RF output is AC-coupled. Optimum input match is achieved when an optional capacitive (~30 fF) stub is included on the input transmission line. This capacitance compliments the bond wire inductance to com- plete the input matching network. No ground wires are needed because ground connections are made with plated through-holes to the backside of the device. Assembly Techniques A conductive epoxy such as ABLEBOND® 71-1LM1 or ABLEBOND® 84-1LM1 is the recommended assembly method provided the Absolute Maximum Thermal Ratings are not exceeded. Solder die attach using a fluxless gold-tin (AuSn) solder preform may also be used. The device should be attached to an electrically conductive surface to complete the DC and RF ground paths. The backside metallization on the device is gold. It is recommended that the RF input and RF output connections be made using either 500 line/inch (or equivalent) gold wire mesh, or dual 0.7 mil diameter gold wire. The RF wires should be kept as short as possible to minimize inductance. The bias supply can be 0.7 mil diameter gold wires. Thermosonic wedge is the preferred method for wire bonding to the gold bond pads. Mesh wires can be attached using a 2 mil round tacking tool and a tool force of approximately 22 grams with an ultrasonic power of roughly 55 dB for a duration of 76 ± 8 msec. A guided- wedge at an ultrasonic power level of 64 dB can be used for the 0.7 mil wire. The recommended wire bond stage temperature is 150 ± 2°C. For more detailed information see HP application note #999 “GaAs MMIC Assembly and Handling Guidelines.” GaAs MMICs are ESD sensitive. Proper precautions should be used when handling these devices. |
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Similar Description - HMMC-5038 |
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