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ATF-10100-GP3 Datasheet(PDF) 1 Page - Agilent(Hewlett-Packard) |
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ATF-10100-GP3 Datasheet(HTML) 1 Page - Agilent(Hewlett-Packard) |
1 / 4 page 5-19 0.5 – 12 GHz Low Noise Gallium Arsenide FET Technical Data Features • Low Noise Figure: 0.5 dB Typical at 4 GHz • Low Bias: VDS=2V,IDS = 25mA • High Associated Gain: 14.0 dB Typical at 4 GHz • High Output Power: 21.0 dBm Typical P1 dB at 4 GHz ATF-10100 Chip Outline Electrical Specifications, TA = 25°C Symbol Parameters and Test Conditions[1] Units Min. Typ. Max. NFO Optimum Noise Figure: VCE = 2 V, IDS = 25 mA f = 2.0 GHz dB 0.4 f = 4.0 GHz dB 0.55 0.7 f = 6.0 GHz dB 0.8 GA Gain @ NFO; VDS = 2 V, IDS = 25 mA f = 2.0 GHz dB 17.0 f = 4.0 GHz dB 12.0 14.0 f = 6.0 GHz dB 12.0 P1 dB Power Output @ 1 dB Gain Compression f = 4.0 GHz dBm 21.0 VDS = 4 V, IDS = 70 mA G1 dB 1 dB Compressed Gain: VDS = 4 V, IDS = 70 mA f = 4.0 GHz dB 15.0 gm Transconductance: VDS = 2 V, VGS = 0 V mmho 80 140 IDSS Saturated Drain Current: VDS = 2 V, VGS = 0 V mA 70 130 180 VP Pinchoff Voltage: VDS = 2 V, IDS = 1 mA V -3.0 -1.3 -0.8 Note: 1. RF performance is determined by packaging and testing 10 devices per wafer. Description The ATF-10100 is a high perfor- mance gallium arsenide Schottky- barrier-gate field effect transistor D SS G G chip. Its premium noise figure makes this device appropriate for use in the first stage of low noise amplifiers operating in the 0.5-12 GHz frequency range. This GaAs FET device has a nominal 0.3 micron gate length interconnects between drain fingers. Total gate periphery is 500 microns. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device. 5965-8702E |
Similar Part No. - ATF-10100-GP3 |
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Similar Description - ATF-10100-GP3 |
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