ATF-10100-GP3 datasheet(1/4 Pages) HP

Part #	ATF-10100-GP3

Description	0.5-12 GHz Low Noise Gallium Arsenide FET

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5-19

0.5 – 12 GHz Low Noise

Gallium Arsenide FET

Technical Data

Features

• Low Noise Figure:

0.5 dB Typical at 4 GHz

• Low Bias:

VDS=2V,IDS = 25mA

• High Associated Gain:

14.0 dB Typical at 4 GHz

• High Output Power:

21.0 dBm Typical P1 dB at 4 GHz

ATF-10100

Chip Outline

Electrical Specifications, TA = 25°C

Symbol

Parameters and Test Conditions[1]

Units

Min.

Typ.

Max.

NFO

Optimum Noise Figure: VCE = 2 V, IDS = 25 mA

f = 2.0 GHz

dB

0.4

f = 4.0 GHz

dB

0.55

0.7

f = 6.0 GHz

dB

0.8

GA

Gain @ NFO; VDS = 2 V, IDS = 25 mA

f = 2.0 GHz

dB

17.0

f = 4.0 GHz

dB

12.0

14.0

f = 6.0 GHz

dB

12.0

P1 dB

Power Output @ 1 dB Gain Compression

f = 4.0 GHz

dBm

21.0

VDS = 4 V, IDS = 70 mA

G1 dB

1 dB Compressed Gain: VDS = 4 V, IDS = 70 mA

f = 4.0 GHz

dB

15.0

gm

Transconductance: VDS = 2 V, VGS = 0 V

mmho

80

140

IDSS

Saturated Drain Current: VDS = 2 V, VGS = 0 V

mA

70

130

180

VP

Pinchoff Voltage: VDS = 2 V, IDS = 1 mA

V

-3.0

-1.3

-0.8

Note:

1. RF performance is determined by packaging and testing 10 devices per wafer.

Description

The ATF-10100 is a high perfor-

mance gallium arsenide Schottky-

barrier-gate field effect transistor

D

SS

G

chip. Its premium noise figure

makes this device appropriate for

use in the first stage of low noise

amplifiers operating in the

0.5-12 GHz frequency range.

This GaAs FET device has a

nominal 0.3 micron gate length

interconnects between drain

fingers. Total gate periphery is

500 microns. Proven gold based

metallization systems and nitride

passivation assure a rugged,

reliable device.

5965-8702E

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ATF-10100-GP3 Datasheet(PDF) 1 Page - Agilent(Hewlett-Packard)

ATF-10100-GP3 Datasheet(HTML) 1 Page - Agilent(Hewlett-Packard)

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