AT-64020 datasheet(2/4 Pages) HP

Part #	AT-64020

Description	Up to 4 GHz Linear Power Silicon Bipolar Transistor

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Manufacturer	HP [Agilent(Hewlett-Packard)]

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4-180

AT-64020 Absolute Maximum Ratings

Absolute

Symbol

Parameter

Units

Maximum[1]

VEBO

Emitter-Base Voltage

V

2

VCBO

Collector-Base Voltage

V

40

VCEO

Collector-Emitter Voltage

V

20

IC

Collector Current

mA

200

PT

Power Dissipation [2,3]

W3

Tj

Junction Temperature

°C

200

TSTG

Storage Temperature

°C

-65 to 200

Thermal Resistance[2,4]:

θ

jc = 40°C/W

Notes:

1. Permanent damage may occur if

any of these limits are exceeded.

2. TCASE = 25°C.

3. Derate at 25 mW/

°C for T

C > 80°C.

4. The small spot size of this tech-

nique results in a higher, though

more accurate determination of

θ

jc

than do alternate methods. See

MEASUREMENTS section

“Thermal Resistance” for more

information.

Electrical Specifications, TA = 25°C

Symbol

Parameters and Test Conditions[1]

Units

Min.

Typ.

Max.

|S21E|

2

Insertion Power Gain; VCE = 16 V, IC = 110 mA

f = 2.0 GHz

dB

7.0

f = 4.0 GHz

2.0

P1 dB

Power Output @ 1 dB Gain Compression

f = 2.0 GHz

dBm

26.5

27.5

VCE = 16 V, IC = 110 mA

f= 4.0 GHz

26.5

G1 dB

1 dB Compressed Gain; VCE = 16 V, IC = 110 mA

f = 2.0 GHz

dB

8.5

10.0

f = 4.0 GHz

6.5

η

T

Total Efficiency at 1 dB Compression:

f = 4.0 GHz

%

35.0

VCE = 16 V, IC = 110 mA

hFE

Forward Current Transfer Ratio; VCE = 8 V, IC = 110 mA

—

20

50

200

ICBO

Collector Cutoff Current; VCB = 16 V

µA

100

IEBO

Emitter Cutoff Current; VEB = 1 V

µA

5.0

Note:

1.

η

T = (RF Output Power) / (RF Input Power + VCE I C).

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