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AT-41511 Datasheet(PDF) 3 Page - Agilent(Hewlett-Packard)

Part No. AT-41511
Description  General Purpose, Low Noise NPN Silicon Bipolar Transistor
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Maker  HP [Agilent(Hewlett-Packard)]
Homepage  http://www.home.agilent.com
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 3 page
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4-136
Figure 9. AT-41511 and AT-41533
P1dB vs. Frequency and Bias at
VCE = 8 V, with Optimal Tuning.
Figure 8. AT-41511 and AT-41533
P1dB vs. Frequency and Bias at
VCE = 5 V, with Optimal Tuning.
Figure 7. AT-41511 and AT-41533
P1dB vs. Frequency and Bias at
VCE = 2.7 V, with Optimal Tuning.
0.1
20
0
FREQUENCY (GHz)
0.6
2.1
2.6
15
10
5
1.6
1.1
25 mA
10 mA
5 mA
0.1
20
0
FREQUENCY (GHz)
0.6
2.1
2.6
15
10
5
1.6
1.1
25 mA
10 mA
5 mA
0.1
20
0
FREQUENCY (GHz)
0.6
2.1
2.6
15
10
5
1.6
1.1
25 mA
10 mA
5 mA
AT-41511, AT-41533 Typical Performance
Figure 2. AT-41511 and AT-41533
Minimum Noise Figure vs. Frequency
and Current at VCE = 5 V.
Figure 1. AT-41511 and AT-41533
Minimum Noise Figure vs. Frequency
and Current at VCE = 2.7 V.
Figure 3. AT-41511 and AT-41533
Minimum Noise Figure vs. Frequency
and Current at VCE = 8 V.
0.1
3.0
0
FREQUENCY (GHz)
0.6
2.1
2.6
2.5
1.5
0.5
1.6
2.0
1.0
1.1
25 mA
10 mA
2, 5 mA
0.1
3.0
0
FREQUENCY (GHz)
0.6
2.1
2.6
2.5
1.5
0.5
1.6
2.0
1.0
1.1
25 mA
10 mA
5 mA
0.1
3.0
0
FREQUENCY (GHz)
0.6
2.1
2.6
2.5
1.5
0.5
1.6
2.0
1.0
1.1
25 mA
2 mA
10 mA
5 mA
0.1
20
0
FREQUENCY (GHz)
0.6
2.1
2.6
15
10
5
1.6
1.1
20
15
10
PKG 11
PKG 33
25
5
10, 25 mA
2 mA
5 mA
2 mA
5 mA
10, 25 mA
Figure 6. AT-41511 and AT-41533
Associated Gain vs. Frequency and
Current at VCE = 8 V.
Figure 5. AT-41511 and AT-41533
Associated Gain vs. Frequency and
Current at VCE = 5 V.
Figure 4. AT-41511 and AT-41533
Associated Gain vs. Frequency and
Current at VCE = 2.7 V.
0.1
20
0
FREQUENCY (GHz)
0.6
2.1
2.6
15
10
5
1.6
1.1
PKG 11
PKG 33
10, 25 mA
5 mA
10, 25 mA
5 mA
0.1
20
0
FREQUENCY (GHz)
0.6
2.1
2.6
15
10
5
1.6
1.1
PKG 11
PKG 33
10, 25 mA
5 mA
10, 25 mA
5 mA




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