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AT-41511 Datasheet(PDF) 2 Page - Agilent(Hewlett-Packard)

Part No. AT-41511
Description  General Purpose, Low Noise NPN Silicon Bipolar Transistor
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Maker  HP [Agilent(Hewlett-Packard)]
Homepage  http://www.home.agilent.com
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 2 page
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4-135
Characterization Information, TA = 25°C
AT-41511 AT-41533
Symbol
Parameters and Test Conditions
Units
Min Typ Min
Typ
NF
Noise Figure
f = 0.9 GHz
dB
1.0
1.0
VCE = 5 V, IC = 5 mA
f = 2.4 GHz
1.7
1.6
GA
Associated Gain
f = 0.9 GHz
dB
15.5
14.5
VCE = 5 V, IC = 5 mA
f = 2.4 GHz
11
9
P1dB
Power at 1 dB Gain Compression (opt tuning)
f = 0.9 GHz
dBm
14.5
14.5
VCE = 5 V, IC = 25 mA
G1dB
Gain at 1 dB Gain Compression (opt tuning)
f = 0.9 GHz
dB
17.5
14.5
VCE = 5 V, IC = 25 mA
IP3
Output Third Order Intercept Point,
f = 0.9 GHz
dBm
25
25
VCE = 5 V, IC =25 mA (opt tuning)
|S21E|2
Gain in 50
Ω system; V
CE = 5 V, IC = 5 mA
f = 0.9 GHz
dB
13.5
15.5
10.8
12.8
f = 2.4 GHz
7.9
5.2
AT-41511, AT-41533 Absolute Maximum Ratings
Absolute
Symbol
Parameter
Units
Maximum[1]
VEBO
Emitter-Base Voltage
V
1.5
VCBO
Collector-Base Voltage
V
20
VCEO
Collector-Emitter Voltage
V
12
IC
Collector Current
mA
50
PT
Power Dissipation[2,3]
mW
225
Tj
Junction Temperature
°C
150
TSTG
Storage Temperature
°C
-65 to 150
Electrical Specifications, TA = 25°C
AT-41511
AT-41533
Symbol
Parameters and Test Conditions
Units Min
Typ
Max
Min
Typ
Max
hFE
Forward Current Transfer Ratio
VCE = 5 V
-
30
150
270
30
150
270
IC = 5 mA
ICBO
Collector Cutoff Current
VCB = 3 V
µA
0.2
0.2
IEBO
Emitter Cutoff Current
VEB = 1 V
µA
1.0
1.0
Notes:
1. Operation of this device above any one
of these parameters may cause
permanent damage.
2. TMounting Surface = 25°C.
3. Derate at 1.82 mW/
°C for T
C > 26°C.
Thermal Resistance:[2]
θ
jc =550°C/W
Ordering Information
Part Number
Increment
Comments
AT-41511-BLK
100
Bulk
AT-41511-TR1
3000
7" Reel
AT-41533-BLK
100
Bulk
AT-41533-TR1
3000
7" Reel




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