AT-31625-TR1 datasheet(1/10 Pages) HP

Part #	AT-31625-TR1

Description	4.8 V NPN Common Emitter Medium Power Output Transistor

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Manufacturer	HP [Agilent(Hewlett-Packard)]

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4.8 V NPN Common Emitter

Medium Power Output Transistor

Technical Data

Features

• 4.8 Volt Operation

• +28.0 dBm Pout @ 900 MHz,

Typ.

• 70% Collector Efficiency

@ 900 MHz, Typ.

• 9 dB Power Gain @ 900 MHz,

Typ.

• -31 dBc IMD3 @ Pout of

21 dBm per Tone, 900 MHz,

Typ.

• 50% Smaller than SOT-223

Package

Applications

• Medium Power Driver

Device for Cellular/PCS,

ISM 900, WLAN

• Output Power Device for

ISM 900, Cordless, WLAN

AT-31625

Description

Hewlett Packard’s AT-31625 is a

low cost, NPN medium power

silicon bipolar junction transistor

housed in a miniature, MSOP-3

surface mount plastic package.

The AT-31625 can be used as a

driver device or an output device,

depending on the specific applica-

tion. The AT-31625 features

+28 dBm CW output power when

operated at 4.8 volts. Excellent

gain and superior efficiency make

the AT-31625 ideal for use in

battery powered systems.

The AT-31625 is fabricated with

Hewlett Packard’s 10 GHz Ft Self-

Aligned-Transistor (SAT) process.

The die are nitride passivated for

surface protection. Excellent

device uniformity, performance

and reliability are produced by the

use of ion-implantation, self-

alignment techniques, and gold

metalization in the fabrication of

these devices.

MSOP-3 Surface Mount

Plastic Package

Outline 25

Pin Configuration

EMITTER 1

2

BASE

3 EMITTER

COLLECTOR

4

5965-5911E

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AT-31625-TR1 Datasheet(PDF) 1 Page - Agilent(Hewlett-Packard)

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