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AT-30533 Datasheet(PDF) 1 Page - Agilent(Hewlett-Packard) |
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AT-30533 Datasheet(HTML) 1 Page - Agilent(Hewlett-Packard) |
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1 / 10 page  4-23 Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data Description Hewlett-Packard’s AT-30511 and AT-30533 are high performance NPN bipolar transistors that have been optimized for maximum fT at low voltage operation, making them ideal for use in battery powered applications in wireless markets. The AT-30533 uses the 3 lead SOT-23, while the AT-30511 places the same die in the higher performance 4 lead SOT-143. Both packages are industry standard, and compatible with high volume surface mount assembly techniques. The 3.2 micron emitter-to-emitter pitch and reduced parasitic design of these transistors yields extremely high performance products that can perform a multi- plicity of tasks. The 5 emitter finger interdigitated geometry yields an extremely fast transistor with high gain and low operating currents. Features • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • 900 MHz Performance: AT-30511:1.1dB NF, 16 dB GA AT-30533:1.1dB NF, 13 dB GA • Characterized for End-Of- Life Battery Use (2.7 V) • SOT-23 and SOT-143 SMT Plastic Packages • Tape-And-Reel Packaging Option Available[1] Optimized performance at 2.7 V makes these devices ideal for use in 900 MHz, 1.8 GHz, and 2.4 GHz battery operated systems as an LNA, gain stage, buffer, oscillator, or active mixer. Typical amplifier designs at 900 MHz yield 1.3 dB noise figures with 13 dB or more associated gain at a 2.7 V, 1 mA bias. Voltage breakdowns are high enough for use at 5 volts. High gain capability at 1 V, 1 mA makes these devices a good fit for 900 MHz pager applications. The AT-3 series bipolar transistors are fabricated using an optimized version of Hewlett- Packard’s 10 GHz f T, 30 GHz fMAX Self- Aligned-Transistor (SAT) process. The die are nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ion-implantation, self- alignment techniques, and gold metalization in the fabrication of these devices. AT-30511 AT-30533 Outline Drawing Note: 1. Refer to “Tape-and-Reel Packaging for Semiconductor Devices”. BASE EMITTER EMITTER COLLECTOR BASE EMITTER COLLECTOR 305 305 SOT-23 (AT-30533) SOT-143 (AT-30511) 5965-8918E |
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