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FU-68SDF-V802M107B Datasheet(PDF) 2 Page - Mitsubishi Electric Semiconductor |
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FU-68SDF-V802M107B Datasheet(HTML) 2 Page - Mitsubishi Electric Semiconductor |
2 / 5 page MITSUBISHI (OPTICAL DEVICES) TENTATIVE FU-68SDF-V802MxxxB 1.58 µm (L-Band) DFB-LD MODULE WITH SINGLEMODE FIBER PIGTAIL (WAVELENGTH SELECTED, BIAS CIRCUIT INTEGRATED, DIGITAL APPLICATION) ELECTRICAL/OPTICAL CHARACTERISTICS (Tld=Tset, Tc=25 °C unless otherwise noted) Parameter Symbol Test Conditions Limits Unit Min. Typ. Max. Threshold current Ith CW - 10 25 mA Optical output power at threshold current Pth CW, If=Ith - - 100 µW Operating current Iop CW, Pf=2mW - 40 65 mA Operating voltage Vop CW, Pf=2mW - 1.3 1.8 V Input impedance Zin Pf=2mW - 25 - Ω Light-emission central wavelength λc (Note 1) (Note 2) nm Central wavelength drift with case temp. ∆λc/∆Tc Tc=-20~70°C -1 - 0 pm/ °C Laser operating temperature Tset - 20 - 35 °C Spectral width ∆λ (Note 1), -20dB - 0.2 0.4 nm Side mode suppression ratio Sr (Note 1) 33 40 - dB Dispersion penalty Pp (Note 1), at 10 -10 BER, +1800ps/nm - - 2 dB Cutoff frequency (-1.5dB optical) fc Pf=2mW 3.5 - - GHz Rise and fall time (10~90%) tr, tf (Note 1) - - 150 psec Relative intensity noise Nr CW, Pf=2mW, 0.5~3GHz - -155 -145 dB/Hz Tracking error (Note 3) Er Tc=-20~70 °C, APC, ATC - - 0.5 dB Differential efficiency η CW, Pf=2mW 0.057 0.07 0.15 mW/ mA Linearity ∆η CW, Pf=0.2~2.4mW, (Note 4) -20 - 20 % Monitor current Imon CW, Pf=2mW, Vrd=5V 0.1 - 2 mA Tc=25°C 35 - - Optical isolation Iso Tc=-20~70 °C 23 - - dB Dark current (PD) Id Vrd=5V, Tc=-20~70 °C - - 0.1 µA Capacitance (PD) Ct Vrd=5V, f=1MHz - - 10 pF Note 1) 2.48832Gb/s NRZ, 2 23-1, Pf_ave=1mW, Extinction ratio 10dB, optical return loss of the connectors should be greater than 40dB in order to ensure the specified performance. Note 2) See Table 1. Note 3) Er=max|10 ×log(Pf / Pf@25°C)| Note 4) Variation of the differential efficiency from the straight line between 0.2mW and 2mW. |
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