STL24N60M2 datasheet(5/16 Pages) STMICROELECTRONICS

Part #	STL24N60M2

Description	N-channel 600 V, 0.186 typ., 18 A MDmesh II Plus low Qg Power MOSFET in a PowerFLAT 8x8 HV package

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DocID024777 Rev 2

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STL24N60M2

Electrical characteristics

Table 7. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

t

d(on)

Turn-on delay time

V

DD

= 300 V, I

D

= 9 A,

R

G

= 4.7

Ω, V

GS

= 10 V

(see

Figure 14 and 19)

-14

-

ns

t

r

Rise time

-

9

-

ns

t

d(off)

Turn-off delay time

-

60

-

ns

t

f

Fall time

-

15

-

ns

Table 8. Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

I

SD

(1)

1.

The value is rated according to R

thj-case

and limited by package.

Source-drain current

-

18

A

I

SDM

(1),(2)

2.

Pulse width limited by safe operating area

Source-drain current (pulsed)

-

72

A

V

SD

(3)

3.

Pulsed: pulse duration = 300 μs, duty cycle 1.5%

Forward on voltage

I

SD

= 18 A, V

GS

= 0

-

1.6

V

t

rr

Reverse recovery time

I

SD

= 18 A, di/dt = 100 A/μs

V

DD

= 60 V (see

Figure 16)

-332

ns

Q

rr

Reverse recovery charge

-

4

μC

I

RRM

Reverse recovery current

-

24

A

t

rr

Reverse recovery time

I

SD

= 18 A, di/dt = 100 A/μs

V

DD

= 60 V, T

j

= 150 °C

(see

Figure 16)

-450

ns

Q

rr

Reverse recovery charge

-

5.5

μC

I

RRM

Reverse recovery current

-

25

A

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