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AP9966GM-HF Datasheet(PDF) 1 Page - Advanced Power Electronics Corp. |
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AP9966GM-HF Datasheet(HTML) 1 Page - Advanced Power Electronics Corp. |
1 / 4 page Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET ▼ Lower Gate Charge BVDSS 40V ▼ Simple Drive Requirement RDS(ON) 16.8mΩ ▼ RoHS Compliant & Halogen-Free ID 8.3A Description Absolute Maximum Ratings Symbol Units VDS V VGS V ID@TA=25℃ A ID@TA=70℃ A IDM A PD@TA=25℃ W TSTG ℃ TJ ℃ Symbol Value Unit Rthj-a Maximum Thermal Resistance, Junction-ambient 3 62.5 ℃ /W Data and specifications subject to change without notice Thermal Data Parameter Operating Junction Temperature Range Storage Temperature Range Continuous Drain Current 3 -55 to 150 -55 to 150 6.6 Pulsed Drain Current 1 30 2 Total Power Dissipation Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 3 200907031 1 AP9966GM-HF Rating 40 +20 8.3 Halogen-Free Product S1 G1 S2 G2 D1 D1 D2 D2 SO-8 G2 D2 S2 G1 D1 S1 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. |
Similar Part No. - AP9966GM-HF_14 |
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Similar Description - AP9966GM-HF_14 |
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