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DCR6650H40 Datasheet(PDF) 7 Page - Dynex Semiconductor |
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DCR6650H40 Datasheet(HTML) 7 Page - Dynex Semiconductor |
7 / 10 page SEMICONDUCTOR DCR6650H42 7/10 www.dynexsemi.com Fig.10 Multi-cycle surge current Fig.11 Single-cycle surge current Fig.12 Stored charge Fig.13 Reverse recovery current 0 20 40 60 80 100 120 1 10 100 Number of cycles at 50Hz Conditions: Tj = 125°C VR = 0 Pulse width = 10ms 0 10 20 30 40 50 60 70 80 90 100 0 20 40 60 80 100 120 140 160 180 200 220 240 260 1 10 100 Pulse width, t p - (ms) ITSM I2t Conditions: Tj = 125°C VR = 0 Half sine wave 0 5000 10000 15000 20000 0 1 2 3 4 5 6 7 8 9 Rate of decay of on state current, di/dt - (A/µs) Qs max = 6762.6*(di/dt) 0.464 Qs min = 2812*(di/dt) 0.531 Conditions: Tj = 125°C Vpeak ~ 2520V VRM ~ 1680V snubber as appropriate to control reverse volts 0 50 100 150 200 250 300 350 400 0 1 2 3 4 5 6 7 8 9 Rate of decay of on state current, di/dt - (A/µs) IRR max = 69.689*(di/dt) 0.7762 IRR min = 41.516*(di/dt) 0.8083 Conditions: Tj = 125°C Vpeak ~ 2520V VRM ~ 1680V snubber as appropriate to control reverse volts |
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