FDMC86265P datasheet(4/8 Pages) FAIRCHILD

Part #	FDMC86265P

Description	P-Channel PowerTrench MOSFET

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

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FDMC86265P Rev.C

Figure 7.

0.0

0.5

1.0

1.5

2.0

2.5

3.0

0

2

4

6

8

10

ID = -1 A

VDD = -100 V

VDD = -50 V

Qg, GATE CHARGE (nC)

VDD = -75 V

Gate Charge Characteristics

Figure 8.

0.1

1

10

100

0.1

1

10

100

1000

f = 1 MHz

VGS = 0 V

-VDS, DRAIN TO SOURCE VOLTAGE (V)

Crss

Coss

Ciss

Capacitance vs Drain

to Source Voltage

Figure9.

0.001

0.01

0.1

1

2

3

4

5

6

7

8

9

10

TJ = 100 oC

TJ = 25 oC

TJ = 125 oC

t

AV, TIME IN AVALANCHE (ms)

UnclampedInductive

Switching Capability

Figure 10.

25

50

75

100

125

150

0.0

0.6

1.2

1.8

2.4

3.0

VGS = -6 V

Limited by Package

RθJC = 7.5

o

C/W

VGS = -10 V

T

C

, CASE TEMPERATURE (

o

C

)

Maximum Continuous Drain

Current vs Case Temperature

Figure 11. Forward Bias Safe

Operating Area

1

10

100

500

0.01

0.1

1

10

CURVE BENT TO

MEASURED DATA

100 μs

10 ms

DC

1 ms

-VDS, DRAIN to SOURCE VOLTAGE (V)

THIS AREA IS

LIMITED BY r

DS(on)

SINGLE PULSE

TJ = MAX RATED

RθJC = 7.5

oC/W

TC = 25

oC

Figure 12. Single Pulse Maximum

Power Dissipation

10

-4

10

-3

10

-2

10

-1

1

10

100

300

SINGLE PULSE

RθJC = 7.5

oC/W

TC = 25

oC

t, PULSE WIDTH (sec)

Typical Characteristics T

J = 25 °C unless otherwise noted

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FDMC86265P Datasheet(PDF) 4 Page - Fairchild Semiconductor

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