Advanced Power

N-CHANNEL ENHANCEMENT MODE

Electronics Corp.

POWER MOSFET

▼ Simple Drive Requirement

60V

▼ Lower Gate Charge

64mΩ

▼ Fast Switching Characteristic

4.8A

▼ RoHS Compliant

Description

Absolute Maximum Ratings

Symbol

Units

V

V

A

A

A

W

W/℃

℃

℃

Symbol

Value

Unit

Rthj-a

Thermal Resistance Junction-ambient

3

Max.

50

℃

/W

Data and specifications subject to change without notice

Pb Free Plating Product

Thermal Data

Parameter

Total Power Dissipation

2.5

-55 to 150

Operating Junction Temperature Range

-55 to 150

Linear Derating Factor

0.02

Storage Temperature Range

Continuous Drain Current

3

3.8

Pulsed Drain Current

1

30

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

3

200603051-1/4

AP9478GM

Rating

60

±25

4.8

The Advanced Power MOSFETs from APEC provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost-effectiveness.

The SO-8 package is universally preferred for all commercial-industrial

surface mount applications and suited for low voltage applications

such as DC/DC converters.

G

D

S

S

S

S

G

D

D

D

D

SO-8