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HZM68MFA Datasheet(PDF) 2 Page - Hitachi Semiconductor |
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HZM68MFA Datasheet(HTML) 2 Page - Hitachi Semiconductor |
2 / 5 page HZM6.8MFA 2 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Value Unit Power dissipation Pd *1 200 mW Junction temperature Tj 150 °C Storage temperature Tstg -55 to +150 °C Note 1. Four device total, With P.C board. Electrical Characteristics (Ta = 25 °C) *1 Item Symbol Min Typ Max Unit Test Condition Zener voltage V Z 6.47 — 7.00 V I Z = 5 mA, 40ms pulse Reverse current I R —— 2 µAV R = 3.5V Capacitance C — — 130 pF V R = 0V, f = 1 MHz Dynamic resistance r d —— 30 Ω I Z = 5 mA ESD-Capability *2 — 30 — — kV C =150pF, R = 330 Ω, Both forward and reverse direction 10 pulse Notes 1. Per one device. 2. Failure criterion ; IR > 2 µA at VR = 3.5V. |
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