2N7002BKM datasheet(4/17 Pages) PHILIPS

Part #	2N7002BKM

Description	60 V, 450 mA N-channel Trench MOSFET

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Manufacturer	PHILIPS [NXP Semiconductors]

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2N7002BKM

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Product data sheet

Rev. 1 — 25 October 2010

4 of 16

NXP Semiconductors

2N7002BKM

60 V, 450 mA N-channel Trench MOSFET

6.

Thermal characteristics

[1]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2]

Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.

IDM = single pulse

(1) tp = 100 μs

(2) tp =1ms

(3) DC; Tsp =25 °C

(4) tp =10ms

(5) tp = 100 ms

(6) DC; Tamb =25 °C; drain mounting pad 1 cm2

Fig 3.

Safe operating area; junction to ambient; continuous and peak drain currents as a function of

drain-source voltage

017aaa108

VDS (V)

10-1

102

10

1

10−1

10

ID

(A)

10−2

(1)

(2)

(3)

(4)

(5)

(6)

Limit RDSon = VDS/ID

Table 6.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Rth(j-a)

thermal resistance from

junction to ambient

in free air

[1] -

305

350

K/W

[2] -

150

175

K/W

Rth(j-sp)

thermal resistance from

junction to solder point

--40

K/W

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