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2N7002BKM Datasheet(PDF) 4 Page - NXP Semiconductors |
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2N7002BKM Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 17 page 2N7002BKM All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 1 — 25 October 2010 4 of 16 NXP Semiconductors 2N7002BKM 60 V, 450 mA N-channel Trench MOSFET 6. Thermal characteristics [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2. IDM = single pulse (1) tp = 100 μs (2) tp =1ms (3) DC; Tsp =25 °C (4) tp =10ms (5) tp = 100 ms (6) DC; Tamb =25 °C; drain mounting pad 1 cm2 Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage 017aaa108 VDS (V) 10-1 102 10 1 1 10−1 10 ID (A) 10−2 (1) (2) (3) (4) (5) (6) Limit RDSon = VDS/ID Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-a) thermal resistance from junction to ambient in free air [1] - 305 350 K/W [2] - 150 175 K/W Rth(j-sp) thermal resistance from junction to solder point --40 K/W |
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