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GBU12M Datasheet(PDF) 1 Page - Diotec Semiconductor |
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GBU12M Datasheet(HTML) 1 Page - Diotec Semiconductor |
1 / 2 page GBU12A ... GBU12M GBU12A ... GBU12M Silicon-Bridge-Rectifiers Silizium-Brückengleichrichter Version 2013-12-10 Dimensions - Maße [mm] Nominal current Nennstrom 12 A Alternating input voltage Eingangswechselspannung 35...700 V Plastic case Kunststoffgehäuse 21.5 x 18.2 x 3.4 [mm] Weight approx. – Gewicht ca. 3.8 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging bulk Standard Lieferform lose im Karton Recognized Product – Underwriters Laboratories Inc.® File E175067 Anerkanntes Produkt – Underwriters Laboratories Inc.® Nr. E175067 Maximum ratings Grenzwerte Type Typ Max. alternating input voltage Max. Eingangswechselspannung VVRMS [V] Repetitive peak reverse voltage Periodische Spitzensperrspannung VRRM [V] 1) GBU12A 35 50 GBU12B 70 100 GBU12D 140 200 GBU12G 280 400 GBU12J 420 600 GBU12K 560 800 GBU12M 700 1000 Repetitive peak forward current Periodischer Spitzenstrom f > 15 Hz IFRM 60 A 1) Peak forward surge current, 50/60 Hz half sine-wave Stoßstrom für eine 50/60 Hz Sinus-Halbwelle TA = 25°C IFSM 270/300 A Rating for fusing, t < 10 ms Grenzlastintegral, t < 10 ms TA = 25°C i2t 375 A2s Operating junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS -50...+150°C -50...+150°C Admissible torque for mounting Zulässiges Anzugsdrehmoment M3 9 ± 10% lb.in. 1 ± 10% Nm 1 Valid per diode – Gültig pro Diode 1 Valid, if leads are kept at ambient temperature TA = 50°C at a distance of 5 mm from case Gültig, wenn die Anschlussdrähte in 5 mm vom Gehäuse auf Umgebungstemperatur TA = 50°C gehalten werden © Diotec Semiconductor AG http://www.diotec.com/ 1 21.5 ±0.7 3.6±0.2 5.08 1.1 +0.2 0.5+0.1 2.2 3.4 ±0.1 GBU ... + – ~ ~ 1.8+0.7 - 0.1 1.8 +0.2 |
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