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GBU12M Datasheet(PDF) 1 Page - Diotec Semiconductor

Part # GBU12M
Description  Silicon-Bridge-Rectifiers
Download  2 Pages
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Manufacturer  DIOTEC [Diotec Semiconductor]
Direct Link  http://www.diotec.com
Logo DIOTEC - Diotec Semiconductor

GBU12M Datasheet(HTML) 1 Page - Diotec Semiconductor

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GBU12A ... GBU12M
GBU12A ... GBU12M
Silicon-Bridge-Rectifiers
Silizium-Brückengleichrichter
Version 2013-12-10
Dimensions - Maße [mm]
Nominal current
Nennstrom
12 A
Alternating input voltage
Eingangswechselspannung
35...700 V
Plastic case
Kunststoffgehäuse
21.5 x 18.2 x 3.4 [mm]
Weight approx. – Gewicht ca.
3.8 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging bulk
Standard Lieferform lose im Karton
Recognized Product – Underwriters Laboratories Inc.® File E175067
Anerkanntes Produkt – Underwriters Laboratories Inc.® Nr. E175067
Maximum ratings
Grenzwerte
Type
Typ
Max. alternating input voltage
Max. Eingangswechselspannung
VVRMS [V]
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
VRRM [V] 1)
GBU12A
35
50
GBU12B
70
100
GBU12D
140
200
GBU12G
280
400
GBU12J
420
600
GBU12K
560
800
GBU12M
700
1000
Repetitive peak forward current
Periodischer Spitzenstrom
f > 15 Hz
IFRM
60 A 1)
Peak forward surge current, 50/60 Hz half sine-wave
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle
TA = 25°C
IFSM
270/300 A
Rating for fusing, t < 10 ms
Grenzlastintegral, t < 10 ms
TA = 25°C
i2t
375 A2s
Operating junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-50...+150°C
-50...+150°C
Admissible torque for mounting
Zulässiges Anzugsdrehmoment
M3
9 ± 10% lb.in.
1 ± 10% Nm
1
Valid per diode – Gültig pro Diode
1
Valid, if leads are kept at ambient temperature TA = 50°C at a distance of 5 mm from case
Gültig, wenn die Anschlussdrähte in 5 mm vom Gehäuse auf Umgebungstemperatur TA = 50°C gehalten werden
© Diotec Semiconductor AG
http://www.diotec.com/
1
21.5
±0.7
3.6±0.2
5.08
1.1
+0.2
0.5+0.1
2.2
3.4
±0.1
GBU ...
+
– ~ ~
1.8+0.7
- 0.1
1.8
+0.2


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