HN58C1001 Series

6

Write Cycle

Parameter

Symbol

Min*

2

Typ

Max

Unit

Test conditions

Address setup time

t

AS

0

——ns

Address hold time

t

AH

150

—

—

ns

CE to write setup time (WE controlled)

t

CS

0

——ns

CE hold time (WE controlled)

t

CH

0

——ns

WE to write setup time (CE controlled)

t

WS

0

——ns

WE hold time (CE controlled)

t

WH

0

——ns

OE to write setup time

t

OES

0

——ns

OE hold time

t

OEH

0

——ns

Data setup time

t

DS

100

—

—

ns

Data hold time

t

DH

10

——ns

WE pulse width (WE controlled)

t

WP

250

—

—

ns

CE pulse width (CE controlled)

t

CW

250

—

—

ns

Data latch time

t

DL

300

—

—

ns

Byte load cycle

t

BLC

0.55

—

30

µs

Byte load window

t

BL

100

—

—

µs

Write cycle time

t

WC

—

—

10*

3

ms

Time to device busy

t

DB

120

—

—

ns

Write start time

t

DW

150*

4

——ns

Reset protect time

t

RP

100

—

—

µs

Reset high time*

5

t

RES

1—

—

µs

Notes: 1. t

no longer driven.

2. Use this device in longer cycle than this value.

3. t

automatically completes the internal write operation within this value.

4. Next read or write operation can be initiated after t

5. This parameter is sampled and not 100% tested.

6. A7 to A16 are page addresses and must be same within the page write operation.

7. See AC read characteristics.